Transport of positrons in an electrically biased MOS system
Journal Article
(1997)
Author(s)
M Clement (TU Delft - QN/Fysics of NanoElectronics)
JMM de Nijs (TU Delft - QN/Fysics of NanoElectronics)
H. Schut (TU Delft - Old - Section Defects in Materials)
A van Veen (TU Delft - Old - sect Radiation Physics Group (TN/RF))
p Balk (External organisation)
Research Group
QN/Fysics of NanoElectronics
To reference this document use:
https://resolver.tudelft.nl/uuid:1ae432b8-a013-4bf2-9e7a-0c4c5f95e46b
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Publication Year
1997
Research Group
QN/Fysics of NanoElectronics
Volume number
81
Pages (from-to)
1943-1955
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