MFA-MTJ Model

Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

Journal article (2022)

Authors

Lizhou Wu National University of Defense Technology
Siddharth Rao IMEC-Solliance
M. Taouil Computer Engineering - EEMCS
Erik Jan Marinissen IMEC-Solliance
Gouri Sankar Kar IMEC-Solliance
S. Hamdioui Quantum & Computer Engineering
Research Group
Computer Engineering (EEMCS) (TU Delft)
Copyright: © 2022 Lizhou Wu, Siddharth Rao, M. Taouil, Erik Jan Marinissen, Gouri Sankar Kar, S. Hamdioui
DOI
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https://doi.org/10.1109/TCAD.2021.3140157
Resistance STT-MRAM Switches Integrated circuit modeling Magnetic tunneling Magnetization Circuit simulation. Magnetic circuits Magnetic devices MTJ model
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Published Date

2022

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Quantum & Computer Engineering

Research Group

Computer Engineering

Abstract

The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named the MFA-magnetic tunnel junction (MTJ) model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 to 175 nm, are used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.