While Resistive RRAM (RRAM) provides appealing features for artificial neural networks (NN) such as low power operation and high density, its conductance variation can pose significant challenges for synaptic weight storage. This paper reports an experimental evaluation of the conductance variations of manufactured RRAMs memory cells at the memory array level. Variability is evaluated with respect to the RRAM low resistance state (LRS) and high resistance state (HRS) conductance ratio. This ratio is selected as the parameter of interest as it guarantees the proper operation of the RRAM: the larger the ratio, the more reliable and robust the RRAM cell is in storing and retrieving data. The measurement results show that conductance ratio is significantly influenced by variability. Using these findings, the performance of an artificial neural network that uses individual RRAM cells for synaptic weight storage is evaluated in relation to conductance variability. It is shown that RRAM variability can heavily affect the network behavior, resulting in a substantial decrease in the classification accuracy during inference.

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Current Spin Wave (SW) state-of-the-art computing relies on wave interference for achieving low power circuits. Despite recent progress, many hurdles, e.g., gate cascading, fan-out achievement, still exist. In a previous work, we introduced a novel SW phase shift based computation paradigm and demonstrated that an n-input Threshold Logic Gate (TLG) can be implemented with n + 1 phase shifters operating on the same SW. In this paper we further develop this concept by introducing a phase shift amount reading method by means of parametric amplification. We make use of 3-input Majority Gate (MAJ3) as discussion vehicle and introduce a novel majority function evaluation approach which postpone the threshold related calculations to the gate output readout stage. Subsequently, we verify this principle by means of micromagnetic simulations and discus the results. Finally, we utilize the proposed MAJ3 gate to implement a collection of representative logic circuits from the EPFL Combinational Benchmarking Suite and evaluate and compare their area, energy consumption, and Energy Area Product (EAP) with the ones of 7 nm CMOS technology node based counterpart imple-mentations. Our estimations indicate that EAP_CMOS/EAP_SW average value is 5.25 and 2.2 for a SW transducer feature size of 20 nm and 30 nm, respectively.

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Applications of Binary Neural Networks (BNNs) are promising for embedded systems with hard constraints on energy and computing power. Contrary to conventional neural networks using floating-point datatypes, BNNs use binarized weights and activations to reduce memory and computation requirements. Memristors, emerging non-volatile memory devices, show great potential as a target implementation platform for BNNs by integrating storage and compute units. However, the efficiency of this hardware highly depends on how the network is mapped and executed on these devices. In this paper, we propose an efficient implementation of XNOR-based BNN to maximize parallelization. In this implementation, costly analog-to-digital converters are replaced with sense amplifiers with custom reference(s) to generate activation values. Besides, a novel mapping is introduced to minimize the overhead of data communication between convolution layers mapped to different memristor crossbars. This comes with extensive analytical and simulation-based analysis to evaluate the implication of different design choices considering the accuracy of the network. The results show that our approach achieves up to $5\times$ energy-saving and $100\times$ improvement in latency compared to baselines.@en

Computation-In-Memory (CIM) using emerging memristive devices offers a promising solution to implementing energy efficient Artificial Intelligence (AI) hardware accelerators. Though, the non-idealities characterizing memristive devices cause a negative impact on the performance of CIM-based micro-architectures. We propose a two-step fault tolerance strategy to address the impact of Stack-at Faults (SAFs) and conductance variation of RRAM crossbar arrays, composed of a fault tolerant activation function and a retraining method. Evaluation results on Binary Neural Network (BNNs) architectures trained with MNIST, Fashion-MNIST, and CIFAR-10 datasets demonstrate that the proposed techniques can restore the classification accuracy by up to 20%, 40% and 80%, respectively.@en

Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO₂ -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.

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Diabetic retinopathy (DR) is a leading cause of permanent vision loss worldwide. It refers to irreversible retinal damage caused due to elevated glucose levels and blood pressure. Regular screening for DR can facilitate its early detection and timely treatment. Neural network-based DR classifiers can be leveraged to achieve such screening in a convenient and automated manner. However, these classifiers suffer from reliability issue where they exhibit strong performance during development but degraded performance after deployment. Moreover, they do not provide supplementary information about the prediction outcome, which severely limits their widespread adoption. Furthermore, energy-efficient deployment of these classifiers on edge devices remains unaddressed, which is crucial to enhance their global accessibility. In this paper, we present a reliable and energy-efficient hardware for DR detection, suitable for deployment on edge devices. We first develop a DR classification model using custom training data that incorporates diverse image quality and image sources along with improved class balance. This enables our model to effectively handle both on-field variations in retinal images and minority DR classes, enhancing its post-deployment reliability. We then propose a pseudo-binary classification scheme to further improve the model performance and provide supplementary information about the model prediction. Additionally, we present an energy-efficient hardware design for our model using memristor-based computation-in-memory, to facilitate its deployment on edge devices. Our proposed approach achieves reliable DR classification with three orders of magnitude reduction in energy consumption over state-of-the-art hardware platforms.

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Artificial Intelligence (AI) supported by Deep Artificial Neural Networks (ANNs) is booming and already used in many applications, with impressive results, and we are still its infancy. For many sensing applications it would be advantageous if we could move AI from cloud to Edge. However this requires huge improvements in energy-efficiency. The CONVOLVE project (convolve.eu) aims at enabling smart edge devices through a concerted effort at all layers of the design stack. This ranges from using much more efficient models and mappings, like exploiting Spiking Neural Networks (SNNs), to new processing architectures, like compute-in-memory (CIM), use of approximation, and using new device technology, like memristors. However these latter changes make HW more susceptible to noise and other disturbances. Online continuous learning (i.e. adapting weights) may alleviate these problems. This paper shows several CONVOLVE developments in the crucial areas of CIM architectures, SNN accelerators and online learning.

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Modern DRAMs are vulnerable to Rowhammer attacks, demanding robust protection methods to mitigate these attacks. Existing solutions aim at increased resilience by improving design and/or adjusting operation parameters, limit row access count by throttling and prevent bit flips by timely row refreshing. However, scaling these methods for future DRAM technologies may incur significant costs in terms of area, power and/or latency. This study analyses the impact of the values of the neighbouring cells on victim cells and introduces a row alternation protection method, which is a novel approach that alternates the data of attacker rows on each access to lower the chance of bit flips in victim rows. Our analysis show that the minimum Rowhammer count to cause a bitflip in a particular cell does not only depend on vertical neighbours from the attacker row, but also on the value of the horizontal neighbours from the victim row as well as diagonal cells from the attacker row. Row alternation is able to protect the majority of the vulnerable cells (i.e., with 65%) for the DRAM used in our case study and in cases where unsuccessful it significantly increases the average minimum required Rowhammer account by 18%.

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Memristive devices have become promising candidates to complement the CMOS technology, due to their CMOS manufacturing process compatibility, zero standby power consumption, high scalability, as well as their capability to implement high-density memories and new computing paradigms. Despite these advantages, memristive devices are susceptible to manufacturing defects that may cause faulty behaviors not observed in CMOS technology, significantly increasing the challenge of testing these novel devices after manufacturing. This work proposes an optimized Design-for-Testability (DfT) strategy based on the introduction of a DfT circuitry that measures the current consumption of Resistive Random Access Memory (ReRAM) cells to detect not only traditional but also unique faults. The new DfT circuitry was validated using a case study composed of a 3x3 word-based ReRAM with peripheral circuitry implemented based on a 130 nm Predictive Technology Model (PTM) library. The obtained results demonstrate the fault detection capability of the proposed strategy with respect to traditional and unique faults. In addition, this paper evaluates the impact related to the DfT circuitry’s introduced overheads as well as the impact of process variation on the resolution of the proposed DfT circuitry.

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Due to the immature manufacturing process, Resistive Random Access Memories (RRAMs) are prone to exhibit new failure mechanisms and faults, which should be efficiently detected for high-volume production. Those unique faults are hard to detect but require specific Design-for-Test (DfT) circuit design. This paper proposes a DfT based on a parallel-reference write circuit that can detect all RRAM array faults during diagnosis, production testing, and its application in the field.@en

Resistive Random-Access Memories (ReRAMs) represent a promising candidate to complement and/or replace CMOS-based memories used in several emerging applications. Despite all the advantages of using these novel memories, mainly due to the memristive device's CMOS manufacturing process compatibility, zero standby power consumption, as well as, high scalability and density, the use of them in real applications depends on being able to guarantee their quality after manufacturing. As observed in CMOS-based memories, ReRAMs are also susceptible to manufacturing deviations, defects, and process variations, that can cause faulty behaviors different from the ones observed in CMOS technology, increasing not only the manufacturing test complexity but also the time required to perform the test. In this context, this paper proposes to study the use of temperature to facilitate fault propagation in ReRAMs, reducing the required test time. A case study composed of a 3x3 word-based ReRAM with peripheral circuitry implemented based on a 130 nm Predictive Technology Model (PTM) library was adopted. During the proposed study, a total of 17 defects were injected in different positions of the ReRAM cell, and their respective faulty behavior was classified into traditional and unique faults, considering three temperatures (25, 100, and -40°C). The obtained results show that the temperature can, depending on the position of the defect, facilitate fault propagation, which reduces the time required for performing manufacturing testing.

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While Spin Waves (SW) interaction provides natural support for low power Majority (MAJ) gate implementations many hurdles still exists on the road towards the realization of practically relevant SW circuits. In this paper we leave the SW interaction avenue and propose Threshold Logic (TL) inspired SW computing, which relies on successive phase rotations applied to one single SW instead of on the interference of an odd number of SWs. After providing a short TL inside we introduce the SW TL gate concept and discuss the way to mirror TL gate weight and threshold values into physical phase-shifter parameters. Subsequently, we design and demonstrate proper operation of a SW TL based Full Adder (FA) by means of micro-magnetic simulations. We conclude the paper by providing inside on the potential advantages of our proposal by means of a conceptual comparison of MAJ and TL based FA implementations.@en

The investigation of neural activity in the murine brain through electrophysiological recordings stands as a fun-damental pursuit within the domain of neuroscience. A specific area of keen interest within this field pertains to the scrutiny of Purkinje cells, nestled within the cerebellum, in order to gain insights into the mechanisms underlying brain injuries and the impairment of motor functions. Notably, Purkinje cells manifest two distinct types of spikes - complex and simple - a pivotal aspect for subsequent classification purposes. However, a critical challenge has persisted in the experimental paradigm: the prevailing setups necessitate the use of wired connections linking the mouse's head stage to data acquisition systems. This constraint substantially curtails the mouse's natural behavior during the course of experimentation, limiting the ability to study essential neural processes and motor function aspects over extended periods. In this paper, we propose a new architectural framework for the detection and classification of neuronal spikes originating from Purkinje cells. This system is engineered to exploit the distinct attributes of these neural entities, effectively winnowing out extraneous data while retaining the pertinent information. The resultant output is a refined dataset, amenable to convenient storage within the mouse's head stage, obviating the need for unwieldy wiring configurations. Our proposed implementation attains a classification accuracy of up to 98% on an in-vivo dataset. Furthermore, its compact form factor en-sures unhindered mobility for the experimental mouse, fostering naturalistic behaviors during the course of scientific inquiry.

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While Spin Waves (SW) interaction provides natural support for low power Majority (MAJ) gate implementations many hurdles still exists on the road towards the realization of practically relevant SW circuits. In this paper we leave the SW interaction avenue and propose Threshold Logic (TL) inspired SW computing, which relies on successive phase rotations applied to one single SW instead of on the interference of an odd number of SWs. After providing a short TL inside we introduce the SW TL gate concept and discuss the way to mirror TL gate weight and threshold values into physical phase-shifter parameters. Subsequently, we design and demonstrate proper operation of a SW TL based Full Adder (FA) by means of micro-magnetic simulations. We conclude the paper by providing inside on the potential advantages of our proposal by means of a conceptual comparison of MAJ and TL based FA implementations.@en

Resistive Random Access Memories (RRAMs) are now undergoing commercialization, with substantial investment from many semiconductor companies. However, due to the immature manufacturing process, RRAMs are prone to exhibit unique defects, which should be efficiently identified for high-volume production. Hence, obtaining diagnostic solutions for RRAMs is necessary to facilitate yield learning, and improve RRAM quality. Recently, the Device-Aware Test (DAT) approach has been proposed as an effective method to detect unique defects in RRAMs. However, the DAT focuses more on developing defect models to aid production testing but does not focus on the distinctive features of defects to diagnose different defects. This paper proposes a Device-Aware Diagnosis method; it is based on the DAT approach, which is extended for diagnosis. The method aims to efficiently distinguish unique defects and conventional defects based on their features. To achieve this, we first define distinctive features of each defect based on physical analysis and characterizations. Then, we develop efficient diagnosis algorithms to extract electrical features and fault signatures for them. The simulation results show the effectiveness of the developed method to reliably diagnose all targeted defects.

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Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones, wearables, and Internet-of-Things sensor systems. In this paper, we propose a new SRAM-based Compute-In-Memory (CIM) accelerator optimized for Spiking Neural Networks (SNNs) Inference. Our proposed architecture employs a multiport SRAM design with multiple decoupled Read ports to enhance the throughput and Transposable Read-Write ports to facilitate online learning. Furthermore, we develop an Arbiter circuit for efficient data-processing and port allocations during the computation. Results for a 128×128 array in 3nm FinFET technology demonstrate a 3.1× improvement in speed and a 2.2× enhancement in energy efficiency with our proposed multiport SRAM design compared to the traditional single-port design. At system-level, a throughput of 44 MInf/s at 607 pJ/Inf and 29mW is achieved.

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As emerging non-volatile memory (NVM) devices, Ferroelectric Field-Effect Transistors (FeFETs) present distinctive opportunities for the design of ultra-dense and low-leakage memory systems. For matured FeFET manufacturing, it is extremely important to have an understanding of manufacturing defects and accurately model them to develop effective test solutions. This paper introduces a comprehensive framework for defect and fault modeling, which enables the development of test solutions. First, a classification of FeFET manufacturing defects is provided; both conventional defects (such as contacts and interconnect defects) as well as unique FeFET defects are discussed. The latter FeFET specific defect leads to unique faults that cannot be adequately described using traditional modeling approaches. Then, the Device-Aware Test (DAT) method is used to effectively and appropriately model, analyze and develop test solutions for such unique defects; the approach will be illustrated for Stuck-at-Polarization (SAP) defects.

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While Resistive RRAM (RRAM) offers attractive features for artificial neural networks (NN) such as low power operation and high-density, its conductance variation can pose significant challenges when the storage of synaptic weights is concerned. This paper reports an experimental evaluation of the conductance variations of manufactured RRAMs at the memory array level. Working at the memory array level allows to catch cycle-to-cycle (C2C) as well as device-to-device (D2D) variability and, hence, to propose a realistic evaluation of the conductance variation. Variability is evaluated with respect to the RRAM low resistance state (LRS) and high resistance state (HRS) conductance ratio. This ratio is selected as the parameter of interest as it guarantees the proper operation of the RRAM: the larger the ratio, the more reliable and robust the RRAM cell is in storing and retrieving data. The measurement results show that the conductance ratio is heavily affected by variability. Large spatial and temporal variations are reported, making challenging RRAM-based analog weight storage.

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