Addressing non-idealities in Resistive Random Access Memories (RRAMs) is crucial for their successful commercialization. For example, the inherent resistance drift that occurs during consecutive read operations can induce Read Disturb Faults (RDF), leading to functional errors. This paper analyzes and characterizes the resistance drift and the RDF based on data measurements and presents a physics-based RRAM compact model that incorporates these non-idealities. Additionally, an in-field mitigation scheme is proposed, leveraging bidirectional read operations to balance the resistance. The scheme is implemented and validated through circuit simulations, both for RRAM used as memory and for RRAM-based computation-in-memory microarchitectures for deep neural networks. The results demonstrate that RRAM without any mitigation scheme can start failing after 8,000 consecutive reads, while our mitigation scheme ensures that the memory remains functional even after 10⁶ consecutive reads. Furthermore, the results indicate that using the MNIST dataset as a case study, the accuracy can drop significantly from 86% to as low as 12.5% without any mitigation scheme. In contrast, the proposed mitigation scheme improves this accuracy up to 84.2%.

The goal of the NEUROKIT2E project is to create an open-source Deep Learning framework for edge and embedded AI built around an established European value chain. This framework, called AIDGE, supports a wide range of application areas that operate independently and serve a global user community. It provides easy and fast full-stack solutions from Neural Network design and optimization to AI application development all the way down to hardware implementations while enabling code generation for application-specific targets. This platform provides flexibility for academic users in the AI domain to explore and innovate while allowing them the possibility to prototype systems, ensuring their work aligns well with industrial needs. This paper presents the results and achievements of the first part of this three-year project, along with its roadmap and expected outcomes.

Full-System (FS) simulation is essential for performance evaluation of complete systems that execute complex applications on a complete software stack consisting of an operating system and user applications. Nevertheless, they require careful fine-tuning against real hardware to obtain reliable performance statistics, which can become tedious, error-prone, and time-consuming with typical trial-and-error approaches. We propose a novel, streamlined, component-level calibration methodology to address these shortcomings to validate FS simulation models. Our methodology greatly accelerates the validation process without sacrificing accuracy. It is Instruction Set Architecture (ISA)-agnostic, and can tackle hardware specifications at different levels of detail. We demonstrate its effectiveness by validating FS models against both open-hardware and IP-protected (closed hardware) RISC-V silicon, achieving a mean error of 19%-23% for the SPEC CPU2017 suite in the two cases. We introduce the first open-source RISC-V-based FS-validated simulation models with a complete and replicable methodology.

Computational-neuroscience research is increasingly in need of larger, biophysically realistic brain models. These analog-in-nature models build upon the Hodgkin-Huxley (HH) formalism and are run on digital, high-performance computing systems making simulation very computationally expensive. In circuit form, these models are theoretically suitable for efficient analog implementation. However, the ion-channel components –predominantly, sodium and potassium– are nonlinear, time-varying resistors, lacking an efficient implementation. Chua et al. proved that these ion-channel models are in fact memristors –devices with a conductance as a function of applied-voltage history– claiming that “memristors are the right stuff for building brains”. However, the kind of actual memristor implementation that is the right one for building brains is not defined. In this article, the device class and characteristics of such memristors are defined and existing memristive implementations of HH-like designs are then reviewed. Surprisingly, although often misclassified as such, no physical implementation currently exists that replicates the original HH equations faithfully or efficiently. Having put forward the desired memristor properties, a design guide for screening suitable memristor designs is then proposed. Screening the existing literature reveals that suitable devices likely already exist for potassium ion-channel emulation, while none exists for sodium; this calls for further investigation of higher-order, voltage-controlled and volatile memristors.

Neuromorphic computing offers a promising solution for realizing energy-efficient and compact Artificial Intelligence (AI) systems. Implemented with Spiking Neural Networks (SNNs), neuromorphic systems can benefit from SNN characteristics, such as event-driven computation, event sparsity, biological plausibility, etc., to achieve high performance and energy efficiency, an aspect vital for the realization of AI at the edge. Although SNNs are biology-inspired structures, their use in mission- and safety-critical applications raises multiple concerns around the trustworthiness of neuromorphic hardware due to various intrinsic and extrinsic reliability and security issues. Hence, adequately studying the dependability of SNNs and neuromorphic hardware accelerators becomes of utmost importance, in order to expose and harden against potential vulnerabilities, so that a reliable and secure operation is ensured. This paper presents an analysis of the dependability and trustworthiness aspects of SNNs and neuromorphic hardware. It outlines potential mitigation and countermeasure strategies to improve the reliability, testability, and security aspects of SNN hardware and ensure its trustworthy deployment in critical application domains.

The development of Ferroelectric Field-Effect Transistor (FeFET) manufacturing requires high-quality test solutions, yet research on FeFET testing is still in a nascent stage. To generate a dedicated test method for FeFETs, it is critical to have a deep understanding of manufacturing defects and accurately model them. In this work, we introduce the unique defect, Anomalous Charge Trapping (ACT), in FeFETs. The ACT-defective FeFET is characterized, and the physical mechanism of the defect is explained. Then, we apply the Deviceaware Test (DAT) method to design a specific ACT-defective FeFET model, which includes the physical impact of the defect on the electrical parameters of defect-free models, and calibrate the model with measurement data. Fault modeling is performed based on circuit-level simulations, and dedicated test solutions are proposed.

Advancements in Artificial Intelligence (AI) and Internet-of-Things (IoT) have increased demand for edge AI, but deployment on traditional AI accelerators, like GPUs and TPUs, using von Neumann architecture, suffer from inefficiencies due to separate memory and compute units. Computation-in-Memory (CIM), utilizing non-volatile memristor devices to leverage analog computing principles and perform in-place computations, holds great potential in improving computational efficiency by eliminating frequent data movement. However, standard implementation of CIM faces several challenges, primarily high power consumption and subsequently induced nonlinearity, debating its viability for edge devices. In this paper, we propose C3CIM, a novel memristor-based CIM micro-architecture, featuring a new bit-cell and array design, targeting efficient implementation of Neural Networks (NN). Our architecture uses a constant current source to perform Multiply-and-Accumulate (MAC) operations with a very low computation current (10 to 100 nA), thereby significantly enhancing power efficiency. We adapted C3CIM for Spiking Neural Networks (SNN) and developed a prototype using TSMC 40nm CMOS node for on-silicon validation. Furthermore, our micro-architecture was benchmarked using two SNN models based on N-MNIST and IBM-Gesture datasets, for comparison against current state-of-the-art (SOTA). Results show up to 35x reduction in power along with 6.7x saving in energy compared to SOTA, demonstrating promising potential of this work for edge AI applications.

Timely identification of cardiac arrhythmia (abnormal heartbeats) is vital for early diagnosis of cardiovascular diseases. Wearable healthcare devices facilitate this process by recording heartbeats through electrocardiogram (ECG) signals and using AI-driven hardware to classify them into arrhythmia classes. Spiking neural networks (SNNs) are well-suited for such hardware as they consume low energy due to event-driven operation. However, their energy-efficiency and accuracy are constrained by encoding methods that translate real-valued ECG data into spikes. In this paper, we present an SNN-based ECG classification architecture featuring a new adaptive multi-threshold spike encoding scheme. This scheme adjusts encoding window and granularity based on the importance of ECG data samples, to capture essential information with fewer spikes. We develop a high-accuracy SNN model for such spike representation, by proposing a technique specifically tailored to our encoding. We design a hardware architecture for this model, which incorporates optimized layer post-processing for energy-efficient data-flow and employs fixed-point quantization for computational efficiency. Moreover, we integrate this architecture with our encoding scheme into a system-on-chip implementation using TSMC 40 nm technology. Our approach provides up to 5.1x energy-efficiency compared to state-of-the-art SNN-based ECG classifiers, with high accuracy.

Edge AI accelerators have revolutionized intelligent information processing, enabling applications, such as self-driving cars and low-power IoT devices. Design efforts prioritize computational power and energy efficiency. Nevertheless, testability is also critical for in-field, reliable operation, especially for novel architectures such as memristive, analog Computation-in-Memory (CIM) cores. These structures combine emerging Resistive Random Access Memory (RRAM) with CMOS peripherals to efficiently implement vector-matrix-multiplication (VMM) operations for inference. Current research on AI Accelerator testing relies on functional test patterns, derived from abstract and unrealistic fault models. This paper presents a novel structural testing methodology for CIM VMM circuits. The methodology utilizes device-level defect models and defines new fault models for CIM VMM. The resulting test patterns are optimized to maximize defect coverage and minimize test time, since they require only a single write operation per victim cell.

While Resistive RRAM (RRAM) provides appealing features for artificial neural networks (NN) such as low power operation and high density, its conductance variation can pose significant challenges for synaptic weight storage. This paper reports an experimental evaluation of the conductance variations of manufactured RRAMs memory cells at the memory array level. Variability is evaluated with respect to the RRAM low resistance state (LRS) and high resistance state (HRS) conductance ratio. This ratio is selected as the parameter of interest as it guarantees the proper operation of the RRAM: the larger the ratio, the more reliable and robust the RRAM cell is in storing and retrieving data. The measurement results show that conductance ratio is significantly influenced by variability. Using these findings, the performance of an artificial neural network that uses individual RRAM cells for synaptic weight storage is evaluated in relation to conductance variability. It is shown that RRAM variability can heavily affect the network behavior, resulting in a substantial decrease in the classification accuracy during inference.

In recent years, Spin Waves (SWs) have emerged as a promising CMOS alternative technology, and SW interference-based majority gates have been proposed and experimentally realized. In this paper, we pursue a different computation avenue and introduce a SW device able to evaluate 2×2 2D convolution, which is a fundamental element for the implementation of Convolutional Neural Networks (CNNs). Assuming that the window pixels are P = [p₁, p₂; p₃, p₄] and the kernel is K = [k₁, k₂; k₃, k₄] we introduce a device which evaluates the convolution result Σ_{i = 1}⁴ p_i k_i within the SW domain by leveraging SWs inherent mechanisms, i.e., information encoding in SW amplitude and phase, SW amplitude decay due to Gilbert damping, SW interference. After introducing the SW device structure we demonstrate its proper behaviour by means of micromagnetic simulations. We also present power consumption, area, and delay estimates and argue that due to the fact that our proposal does not rely on standard adders and multipliers, it can substantially outperform traditional CMOS-based convolution implementations.

The IEEE European Test Symposium (ETS) has been facilitating progress in electronic systems testing since its launch in 1996. On the occasion of its 30th anniversary, this collaborative paper gathers sections by 21 ETS teams to outline their influential ideas and milestones. Each team's section highlights historical perspective, current research, frameworks and projects as well as forward-looking research agendas in the area of electronic-based circuits and systems testing, reliability, safety, security and validation. This anniversary summary documents how research of various ETS teams, exemplifying the test community, has been evolving and transitioning from concepts to practical standards and Electronic Design Automation (EDA) tools and flows. This legacy is a strong base to drive the next generation of advances in electronic systems testing.

Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones, wearables, and Internet-of-Things sensor systems. In this paper, we propose a new SRAM-based Compute-In-Memory (CIM) accelerator optimized for Spiking Neural Networks (SNNs) Inference. Our proposed architecture employs a multiport SRAM design with multiple decoupled Read ports to enhance the throughput and Transposable Read-Write ports to facilitate online learning. Furthermore, we develop an Arbiter circuit for efficient data-processing and port allocations during the computation. Results for a 128×128 array in 3nm FinFET technology demonstrate a 3.1× improvement in speed and a 2.2× enhancement in energy efficiency with our proposed multiport SRAM design compared to the traditional single-port design. At system-level, a throughput of 44 MInf/s at 607 pJ/Inf and 29mW is achieved.

Artificial Intelligence (AI) supported by Deep Artificial Neural Networks (ANNs) is booming and already used in many applications, with impressive results, and we are still its infancy. For many sensing applications it would be advantageous if we could move AI from cloud to Edge. However this requires huge improvements in energy-efficiency. The CONVOLVE project (convolve.eu) aims at enabling smart edge devices through a concerted effort at all layers of the design stack. This ranges from using much more efficient models and mappings, like exploiting Spiking Neural Networks (SNNs), to new processing architectures, like compute-in-memory (CIM), use of approximation, and using new device technology, like memristors. However these latter changes make HW more susceptible to noise and other disturbances. Online continuous learning (i.e. adapting weights) may alleviate these problems. This paper shows several CONVOLVE developments in the crucial areas of CIM architectures, SNN accelerators and online learning.

Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO₂ -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.

State-of-the-Art (SotA) hardware implementations of Deep Neural Networks (DNNs) incur high latencies and costs. Binary Neural Networks (BNNs) are potential alternative solutions to realize faster implementations without losing accuracy. In this paper, we first present a new data mapping, called TacitMap, suited for BNNs implemented based on a Computation-In-Memory (CIM) architecture. TacitMap maximizes the use of available parallelism, while CIM architecture eliminates the data movement overhead. We then propose a hardware accelerator based on optical phase change memory (oPCM) called EinsteinBarrier. Ein-steinBarrier incorporates TacitMap and adds an extra dimension for parallelism through wavelength division multiplexing, leading to extra latency reduction. The simulation results show that, compared to the SotA CIM baseline, TacitMap and EinsteinBarrier significantly improve execution time by up to ∼ 154× and ∼ 3113×, respectively, while also maintaining the energy consumption within 60% of that in the CIM baseline.

The Advanced Encryption Standard (AES) is widely recognized as a robust cryptographic algorithm utilized to protect data integrity and confidentiality. When it comes to lightweight implementations of the algorithm, the literature mainly emphasizes area and power optimization, often overlooking considerations related to performance and security. This paper evaluates two of our previously proposed lightweight AES implementations using both profiled and non-profiled attacks. One is an unprotected implementation, and the other one is a protected version using Domain-Oriented Masking (DOM). The findings of this study indicate that the inclusion of DOM in the design enhances its resistance to attacks at the cost of doubling the area.

While Resistive RRAM (RRAM) offers attractive features for artificial neural networks (NN) such as low power operation and high-density, its conductance variation can pose significant challenges when the storage of synaptic weights is concerned. This paper reports an experimental evaluation of the conductance variations of manufactured RRAMs at the memory array level. Working at the memory array level allows to catch cycle-to-cycle (C2C) as well as device-to-device (D2D) variability and, hence, to propose a realistic evaluation of the conductance variation. Variability is evaluated with respect to the RRAM low resistance state (LRS) and high resistance state (HRS) conductance ratio. This ratio is selected as the parameter of interest as it guarantees the proper operation of the RRAM: the larger the ratio, the more reliable and robust the RRAM cell is in storing and retrieving data. The measurement results show that the conductance ratio is heavily affected by variability. Large spatial and temporal variations are reported, making challenging RRAM-based analog weight storage.