MT

M. Taouil

157 records found

While Resistive RRAM (RRAM) provides appealing features for artificial neural networks (NN) such as low power operation and high density, its conductance variation can pose significant challenges for synaptic weight storage. This paper reports an experimental evaluation of the co ...
Resistive Random Access Memories (RRAMs) are now undergoing commercialization, with substantial investment from many semiconductor companies. However, due to the immature manufacturing process, RRAMs are prone to exhibit new failure mechanisms and faults, which should be efficien ...

Testing STT-MRAMs

Do We Need Magnets in our Automated Test Equipment?

The Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is on its way to commercialization. However, the development of high-quality test solutions for STT-MRAMs poses challenges due to the specific working mechanism of the core element of the STT-MRAM bit cells, i.e., ...
Guaranteeing high-quality test solutions for Spin-Transfer Torque Magnetic RAM (STT-MRAM) is a must to speed up its high-volume production. A high test quality requires maximizing the fault coverage. Detecting permanent faults is relatively simple compared to intermittent faults; ...
Resistive Random Access Memories (RRAMs) are now undergoing commercialization, with substantial investment from many semiconductor companies. However, due to the immature manufacturing process, RRAMs are prone to exhibit unique defects, which should be efficiently identified for ...
Computation-in-Memory (CIM) architectures present a promising solution for efficient implementation of Neural Networks. Particularly, SRAM-based digital CIM architectures are optimal candidates to realize them. Recent studies have revealed potential weaknesses in these architectu ...
Modern DRAMs are vulnerable to Rowhammer attacks, demanding robust protection methods to mitigate these attacks. Existing solutions aim at increased resilience by improving design and/or adjusting operation parameters, limit row access count by throttling and prevent bit flips by ...
The Advanced Encryption Standard (AES) is widely recognized as a robust cryptographic algorithm utilized to protect data integrity and confidentiality. When it comes to lightweight implementations of the algorithm, the literature mainly emphasizes area and power optimization, oft ...
Resistive Random-Access Memories (ReRAMs) represent a promising candidate to complement and/or replace CMOS-based memories used in several emerging applications. Despite all the advantages of using these novel memories, mainly due to the memristive device's CMOS manufacturing pro ...
Due to the immature manufacturing process, Resistive Random Access Memories (RRAMs) are prone to exhibit new failure mechanisms and faults, which should be efficiently detected for high-volume production. Those unique faults are hard to detect but require specific Design-for-Test ...
As emerging non-volatile memory (NVM) devices, Ferroelectric Field-Effect Transistors (FeFETs) present distinctive opportunities for the design of ultra-dense and low-leakage memory systems. For matured FeFET manufacturing, it is extremely important to have an understanding of ma ...
While Resistive RRAM (RRAM) offers attractive features for artificial neural networks (NN) such as low power operation and high-density, its conductance variation can pose significant challenges when the storage of synaptic weights is concerned. This paper reports an experimental ...
As electronics and software become more integrated into automobiles, Functional Safety (FuSa) per ISO 26262 becomes important. It assesses the risk level of automotive chips, reflected by the Automotive Safety Integrity Level (ASIL). Fault injection simulation verifies the FuSa o ...

Survey on Architectural Attacks

A Unified Classification and Attack Model

According to the World Economic Forum, cyberattacks are considered as one of the most important sources of risk to companies and institutions worldwide. Attacks can target the network, software, and/or hardware. Over the years, much knowledge has been developed to understand and ...
This paper addresses one of the directions of the HORIZON EU CONVOLVE project being dependability of smart edge processors based on computation-in-memory and emerging memristor devices such as RRAM. It discusses how how this alternative computing paradigm will change the way we u ...
The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production requires high-quality dedicated test solutions, for which understanding and modeling of manufacturing defects of the magnetic tunnel junction (MTJ) is crucial. This paper introduces and characterizes ...
Hardware security is currently a very influential domain, where each year countless works are published concerning attacks against hardware and countermeasures. A significant number of them use machine learning, which is proven to be very effective in other domains. This survey, ...
Resistive Random Access Memory (RRAM) is a potential technology to replace conventional memories by providing low power consumption and high-density storage. As various manufacturing vendors make significant efforts to push it to high-volume production and commercialization, high ...
Resistive Random Access Memory (RRAM, or ReRAM) is a promising memory technology to replace Flash because of its low power consumption, high storage density, and simple integration in existing IC production processes. This has motivated many companies to invest in this technology ...
Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) are on their way to commercialization. However, obtaining high-quality test and diagnosis solutions for STT-MRAMs is challenging due to the existence of unique defects in Magnetic Tunneling Junctions (MTJs). Recently, the Device-Awar ...