This work investigates the role of grain size and recrystallization texture in the corrosion behavior of pure iron in 0.1 M sulfuric acid solution. Annealing heat treatment was applied to obtain samples with different average grain sizes (26, 53 and 87 µm). Optical microscopy, X-ray diffraction and electron backscatter diffraction techniques were used to characterize the microstructure. The EBSD data analysis showed ferrite phase with no inclusions and very low geometrically necessary dislocation density, indicating strain-free grains constituting all samples. The crystallographic texture analysis of the samples revealed that the 26 µm grain size sample had a high volume fraction of {111} oriented grains parallel to the sample surface, while other samples exhibited nearly random crystallographic texture. The electrochemical results from potentiodynamic polarization and electrochemical impedance spectroscopy showed a decrease in corrosion resistance from 87 µm to 53 µm grain size sample and then an increase for the 26 µm grain size sample. This increase was attributed to the dominant effect of recrystallization texture on the corrosion behavior of the sample. The cathodic hydrogen evolution reaction kinetics was found to play a decisive role in the corrosion behavior of iron.

The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the defect injection and circuit simulation for fault modeling without incorporating the impact of magnetic coupling will result in an incomplete set of fault models; hence, not obtaining accurate fault models. Magnetic coupling introduced by the stray field is an inherent property of STT-MRAMs and may foster the occurrence of additional memory faults. Not considering the magnetic coupling clearly will give rise to test escapes. The paper introduces a compact model for STT-MRAM that incorporates the intra- and inter-cell stray field, uses this model to derive the full set of fault models for interconnect and contact defects, and finally proposes an efficient test solution.