Origin of charged gap states in a-Si:H and their evolution during light soaking

Journal article (2004)

Authors

V Nadazdy Electronic Components, Technology and Materials - EEMCS
M. Zeman Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2004

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials