Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers

Journal article (2010)

Authors

S.W.H. Eijt RST/Fundamental Aspects of Materials and Energy - AS
H Zhu External organisation
H. Schut RST/Neutron and Positron Methods in Materials - AS
M. Tijssen Electronic Components, Technology and Materials - EEMCS
M. Zeman Photovoltaic Materials and Devices - EEMCS
Research Group
RST/Fundamental Aspects of Materials and Energy (AS) (TU Delft)
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Published Date

2010

Language

Undefined/Unknown

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Faculty

Applied Sciences

Department

RST/Radiation, Science and Technology

Research Group

RST/Fundamental Aspects of Materials and Energy

Abstract

Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a-Si:H) absorber layers fabricated by the PE-CVD method with typical thicknesses of 300-500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen-to-silane flow ratio during their deposition, related to hydrogen-induced changes in the microstructure and local composition at the positron trapping site. Light-soaking degradation induces a time-dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT-Photocurrent Spectroscopy measurements.