The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Journal article (2020)

Authors

R. Sokolovskij Electronic Components, Technology and Materials - EEMCS
Jian Zhang Fudan University
Y. Jiang BT/Bioprocess Engineering - AS
H. Yu Applied Sciences
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2020 R. Sokolovskij, Jian Zhang, Hongze Zheng, Wenmao Li, Y. Jiang, Gaiying Yang, H. Yu, Pasqualina M Sarro, Kouchi Zhang
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Published Date

2020

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high temperature. With increasing recess depth, the threshold voltage (VTH) shifted from -1.57 to 1.49 V. A shallow recess (5 nm) resulted in a 1.03 mA increase in signal variation (AIDS), while a deep recess (15 nm) resulted in the highest sensing response (S) of 145.8% towards 300 ppm H 2 as compared to reference sensors without gate recess. Transient measurements demonstrated reversible H 2 response for all tested devices. The response and recovery time towards 250 ppm gradually decreased from 7.3 to 2.5 min and from 29.2 to 8.85 min going from 0 nm to 15 nm recess depth. The power consumption of the sensors reduced with increasing recess depth from 146.6 to 2.95 mW.