The design of a high speed CMOS image sensor
featuring global shutter, high dynamic range and flexible exposure control in 110nm technology
P. Stampoglis (TU Delft - Electrical Engineering, Mathematics and Computer Science)
A. Theuwissen – Mentor (TU Delft - Electronic Instrumentation)
Edoardo Charbon – Graduation committee member (TU Delft - OLD QCD/Charbon Lab)
Gaozhan Cai – Graduation committee member (Caeleste)
Bert Luyssaert – Graduation committee member (Caeleste)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
High speed imagers find applications in many fields such as scientific and medical imaging, automotive applications, machine vision and much more. In this thesis, the design of a high speed, high dynamic range (HDR) CMOS sensor with electronic global shutter (GS) and flexible exposure control is presented. The sensor is designed in the 0.11μm CIS process, features 1k(H) x 1k(V) pixels and achieves frame rates greater that 10.000 fps.A review of the architecture of the sensor is given, along with functional illustrations for each comprising block. The quadrant-based approach is described, along with the selectable region-of-interest capability. The pixel design is a eleven-transistor (11T) pinned photodiode global shutter pixel, implementing HDR by means of two in-pixel capacitors. The design of the pipelined Sample & Hold, column gain and column-level Correlated Double Sampling (CDS) circuits are shown.