The design of a high speed CMOS image sensor

featuring global shutter, high dynamic range and flexible exposure control in 110nm technology

Master thesis (2019)

Authors

P. Stampoglis Electrical Engineering, Mathematics and Computer Science

Contributors

A.J.P.A.M. Theuwissen Electronic Instrumentation - EEMCS (supervisor 1)
E. Charbon-Iwasaki-Charbon OLD QCD/Charbon Lab (supervisor 2)
Gaozhan Cai Caeleste (supervisor 2)
Bert Luyssaert Caeleste (supervisor 2)
Faculty
Electrical Engineering, Mathematics and Computer Science
Copyright: © 2019 Periklis Stampoglis
High speed CMOS image sensor HDR Global shutter
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Published Date

18-03-2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Abstract

High speed imagers find applications in many fields such as scientific and medical imaging, automotive applications, machine vision and much more. In this thesis, the design of a high speed, high dynamic range (HDR) CMOS sensor with electronic global shutter (GS) and flexible exposure control is presented. The sensor is designed in the 0.11μm CIS process, features 1k(H) x 1k(V) pixels and achieves frame rates greater that 10.000 fps.A review of the architecture of the sensor is given, along with functional illustrations for each comprising block. The quadrant-based approach is described, along with the selectable region-of-interest capability. The pixel design is a eleven-transistor (11T) pinned photodiode global shutter pixel, implementing HDR by means of two in-pixel capacitors. The design of the pipelined Sample & Hold, column gain and column-level Correlated Double Sampling (CDS) circuits are shown.