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Single-crystal copper films on sapphire

Journal Article (2020)
Authors

G.C.A.M. Janssen (TU Delft - Micro and Nano Engineering)

N.M. van der Pers ((OLD) MSE-1)

Ruud W.A. Hendrikx ((OLD) MSE-1)

A.J. Böttger ((OLD) MSE-1)

C Kwakernaak ((OLD) MSE-1)

B. Rieger (TU Delft - ImPhys/Imaging Physics, ImPhys/Computational Imaging)

M.H.F. Sluiter ((OLD) MSE-7)

Research Group
Micro and Nano Engineering
Copyright
© 2020 G.C.A.M. Janssen, N.M. van der Pers, R.W.A. Hendrikx, A.J. Bottger, C. Kwakernaak, B. Rieger, M.H.F. Sluiter
To reference this document use:
https://doi.org/10.1016/j.tsf.2020.138137
More Info
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Publication Year
2020
Language
English
Copyright
© 2020 G.C.A.M. Janssen, N.M. van der Pers, R.W.A. Hendrikx, A.J. Bottger, C. Kwakernaak, B. Rieger, M.H.F. Sluiter
Research Group
Micro and Nano Engineering
Volume number
709
DOI:
https://doi.org/10.1016/j.tsf.2020.138137
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Abstract

Single-crystal copper films on sapphire have recently been reported upon in relation to graphene growth on these films. In the present paper the kinetics of the formation of single crystal copper films is investigated. We demonstrate the importance of heating the sapphire substrate in 1000 hPa oxygen, followed by a fast cooling prior to depositing the copper film. The importance of this treatment is tentatively explained by the dissolution of oxygen in sapphire and subsequent out-diffusion during recrystallization of the copper film to form a copper-oxide interface layer. Also, the importance of avoiding oxygen incorporation in the sputter deposited film is demonstrated.