On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

Journal article (2009)

Authors

M.A. Wank Photovoltaic Materials and Devices -

R.A.C.M.M. van Swaaij Electronic Components, Technology and Materials -

MCM van de Sanden External organisation

Research Group

Photovoltaic Materials and Devices () (TU Delft)

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Published Date

2009

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Abstract
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150¿400¿°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the observed roughness development in this phase. After coalescence we observe two distinct phases in the roughness evolution and highlight trends which are incompatible with the idea of dominant surface diffusion. Alternative, nonlocal mechanisms such as the re-emission effect are discussed, which can partly explain the observed incompatibilities.