On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

Abstract

Abstract
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150¿400¿°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the observed roughness development in this phase. After coalescence we observe two distinct phases in the roughness evolution and highlight trends which are incompatible with the idea of dominant surface diffusion. Alternative, nonlocal mechanisms such as the re-emission effect are discussed, which can partly explain the observed incompatibilities.