Leakage current modeling of test structures for characterization of dark current in CMOS image sensors

Loukianova, NV; Folkerts, H-O; Maas, JPV; Verbugt, DWE; Mierop, AJ; Hoekstra, W; Roks, E; Theuwissen, A.J.P.A.M.

Leakage current modeling of test structures for characterization of dark current in CMOS image sensors

Journal article (2003)

Authors

NV Loukianova External organisation

H-O Folkerts External organisation

JPV Maas External organisation

DWE Verbugt External organisation

AJ Mierop External organisation

W Hoekstra External organisation

E Roks External organisation

A.J.P.A.M. Theuwissen Electronic Instrumentation

Research Group

Electronic Instrumentation

To reference this document use:

http://resolver.tudelft.nl/uuid:4ce3e6eb-cef2-46de-8197-fbaa4782075c

More Info

expand_more

Published Date

2003

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

Electronic Instrumentation

No files available

Metadata only record. There are no files for this journal article.