Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications
S Latkowski (Eindhoven University of Technology)
Petrus J. Van Veldhoven (Eindhoven University of Technology)
A. Hänsel (TU Delft - ImPhys/Optics)
D. D’Agostino (Eindhoven University of Technology)
H. Rabbani-Haghighi (Eindhoven University of Technology)
B. Docter (EFFECT Photonics B.V.)
N. Bhattacharya (TU Delft - ImPhys/Optics)
P. J A Thijs (Eindhoven University of Technology)
H. P M M Ambrosius (Eindhoven University of Technology)
M Smit (Eindhoven University of Technology)
K. A. Williams (Eindhoven University of Technology)
E.A.J.M. Bente (Eindhoven University of Technology)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.