In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.

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We present a widely tunable extended cavity ring laser operating at 2 μm that is monolithically integrated on an indium phosphide substrate. The photonic integrated circuit is designed and fabricated within a multiproject wafer run using a generic integration technology platform. The laser features an intracavity tuning mechanism based on nested asymmetric Mach-Zehnder interferometers with voltage controlled electro-refractive modulators. The laser operates in a single-mode regime and is tunable over the recorded wavelength range of 31 nm, spanning from 2011 to 2042 nm. Its capability for high-resolution scanning is demonstrated in a single-line spectroscopy experiment using a carbon dioxide reference cell.@en

Progress on the development of a long wavelength (∼2 μm) generic monolithic photonic integration technology on indium phosphide substrate and a novel concept of a tunable laser realized as a photonic integrated circuit using such technology are presented. Insights into the development of active and passive waveguide structures which are used to define a limited set of on-chip functionalities in the form of building blocks will be given. A novel tunable laser was proposed and designed using such predefined set of basic building blocks. The laser geometry features an intra-cavity wavelength tuning mechanism based on asymmetric Mach-Zehnder interferometers in a nested configuration. The photonic integrated circuit chip was fabricated within the first long wavelength multi-project wafer run. The experimental evaluations of the fabricated device show a record tuning range of 31 nm around 2027 nm and successful measurements of a 0.86 GHz wide absorption line of carbon dioxide. These results provide a demonstration of a fully functional photonic integrated circuit operating at wavelengths that are much longer than those in the typical telecommunication windows as well as the use of indium phosphide based generic photonic integration technologies for gas sensing applications.@en