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A pragmatic gaze on stochastic resonance based variability tolerant memristance enhancement

Conference Paper (2019)
Author(s)

Vasileios Ntinas (Democritus University of Thrace, Universitat Politecnica de Catalunya)

Antonio Rubio (Universitat Politecnica de Catalunya)

Georgios Ch Sirakoulis (Democritus University of Thrace)

Sorin D. Cotofana (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Computer Engineering
DOI related publication
https://doi.org/10.1109/ISCAS.2019.8702792 Final published version
More Info
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Publication Year
2019
Language
English
Research Group
Computer Engineering
Volume number
2019-May
Article number
8702792
ISBN (electronic)
9781728103976
Event
2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 (2019-05-26 - 2019-05-29), Sapporo, Japan
Downloads counter
151

Abstract

Stochastic Resonance (SR) is a nonlinear system specific phenomenon, which was demonstrated to lead to system unexpected (counter-intuitive) performance improvements under certain noise conditions. Memristor, on the other hand, is a fundamentally nonlinear circuit element, thus susceptible to benefit from SR, which recently came in the spotlight of the emerging technologies potential candidates. However, at this time, the variability exhibited by manufactured memristor devices within the same array constitutes the main hurdle in the road towards the commercialisation of memristor-based memories and/or computing units. Thus, in this paper, memristor SR effects are explored, assuming various memristor models, and SR-based memristance range enhancement, tolerant to device-to-device variability, is demonstrated. Our experiments reveal that SR can induce significant RMAX/RMIN ratio increase under up to 60% variability, getting as high as 3.4× for 29 dBm noise power.