A BJT-based Temperature-to-Digital Converter with ±60mK (3σ) Inaccuracy from -70°C to 125°C in 160nm CMOS

Conference paper (2016)

Authors

B. Yousefzadeh Electronic Instrumentation -

S. Heidary Shalmany Electronic Instrumentation -

K.A.A. Makinwa Microelectronics

Research Group

Electronic Instrumentation () (TU Delft)

Sensors Energy efficiency Sensitivity Substrates Temperature measurement Mirrors Voltage measurement

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http://resolver.tudelft.nl/uuid:544d53de-f47d-4de4-864e-2fb68def5ca2

Published Date

2016-6

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This paper presents the most accurate BJT-based CMOS temperature-to-digital converter (TDC) ever reported, with an inaccuracy of ±60mK (3σ) from -70°C to 125°C. This is 2× better than the state-of-the-art, despite being implemented in a process (160nm) that only offers low-βF (<;5) PNPs. It is also the most energy-efficient ever reported, with a resolution FOM of 7.3pJ°C2. This level of performance is achieved by an improved βF-compensation scheme, the use of dynamic error correction techniques to suppress non-BJT related errors and the use of an energy-efficient zoom-ADC based on current-reuse OTAs. These techniques also result in very low power-supply sensitivity (12mK/V), thus maintaining TDC accuracy for supply voltages ranging from 1.5V to 2V.