Suppression of spatial and temporal noise in a CMOS image sensor

Journal Article (2019)
Author(s)

Shuang Xie (TU Delft - Electronic Instrumentation, IMEC)

A.J.P.A.M. Theuwissen (Harvest Imaging, TU Delft - Electronic Instrumentation)

Research Group
Electronic Instrumentation
Copyright
© 2019 S. Xie, A.J.P.A.M. Theuwissen
DOI related publication
https://doi.org/10.1109/jsen.2019.2941122
More Info
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Publication Year
2019
Language
English
Copyright
© 2019 S. Xie, A.J.P.A.M. Theuwissen
Research Group
Electronic Instrumentation
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository as part of the Taverne amendment. More information about this copyright law amendment can be found at https://www.openaccess.nl. Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. @en
Issue number
1
Volume number
20
Pages (from-to)
162-170
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Abstract

This paper presents methodologies for suppressing the spatial and the temporal noise in a CMOS image sensor (CIS). First of all, it demonstrates by using a longer-length column bias transistor, both the fixed pattern noise (FPN) and temporal noise can be suppressed. Meantime, it employs column-level oversampling delta-sigma ADCs to suppress temporal noise as well as to facilitate the realization of the thermal compensation of dark signal non-uniformity (DSNU). In addition, the image pixels are re-configured as temperature sensors with inaccuracies within ±0.65 °C, between -20 and 80 °C. If the dark current and its non-uniformities are caused by thermal gradients, the obtained in-pixel thermal information can be employed to compensate for the measured dark current by 95 % and DSNU, up to 13 %. All the column-level 13 bit 2
nd-order incremental delta-sigma ADCs are measured with SNR around 65 dB and INL around 1.5 LSB, when tested with a -8 dB input signal and sampling at 2 MHz with an oversampling ratio (OSR) of 128, when the full scale voltage is 2 Vp-p. The 4T Pinned Photodiode (PPD) CIS is measured to have a temporal noise of 34~\mu \text{V} rms (with an OSR of 128, or, an input referred temporal noise of 0.5 e
- rms, with a conversion gain, CG, of 73~\mu \text{V}/ \text{e}^{-} ), a column gain FPN of 0.06 %, a dynamic range (DR) of 92 dB (with OSR = 512), as well as a linearity of 1 %. It has a measured DSNU of 3.2 %, after the thermal compensation using the in-pixel temperature sensors, a dark current of 290 pA/cm
2 and 15 pA/cm
2, measured at 60 °C, before and after the thermal compensation, respectively.

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