Properties of (Nb0.35, Ti0.15)-xN1-x thin films deposited on silicon wafers at ambient substrate temperature.

Journal article (2000)

Authors

N Iossad QN/Fysics of NanoElectronics
AV Mijiritskii External organisation
VV Rodatis External organisation
N.M. van der Pers OLD Virtual Materials and Mechanics
BD Jackson QN/Fysics of NanoElectronics
JR Gao QN/Fysics of NanoElectronics
SN Polyakov External organisation
PN Dmitriev External organisation
T.M. Klapwijk QN/Fysics of NanoElectronics
Research Group
QN/Fysics of NanoElectronics
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Published Date

2000

Language

Undefined/Unknown

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Research Group

QN/Fysics of NanoElectronics