Properties of (Nb0.35, Ti0.15)-xN1-x thin films deposited on silicon wafers at ambient substrate temperature.

N Iossad (TU Delft - QN/Fysics of NanoElectronics)

AV Mijiritskii (External organisation)

VV Rodatis (External organisation)

NM van der Pers (TU Delft - OLD Virtual Materials and Mechanics)

BD Jackson (TU Delft - QN/Fysics of NanoElectronics)

JR Gao (TU Delft - QN/Fysics of NanoElectronics)

SN Polyakov (External organisation)

PN Dmitriev (External organisation)

TM Klapwijk (TU Delft - QN/Fysics of NanoElectronics)