From Si Towards SiC Technology for Harsh Environment Sensing
Luke Middelburg (TU Delft - Electronic Components, Technology and Materials)
Williem van Driel (TU Delft - Electronic Components, Technology and Materials)
Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.