From Si Towards SiC Technology for Harsh Environment Sensing

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From Si Towards SiC Technology for Harsh Environment Sensing

Book Chapter (2020)

Author(s)

Luke Middelburg (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Willem van Driel (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Kouchi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group

Electronic Components, Technology and Materials

SiC Harsh environments Sensor integration More than Moore WBG

DOI related publication

https://doi.org/10.1007/978-3-030-16577-2_1 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:57dbcb17-b25e-4417-a86f-d9fc43b48aa7

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Publication Year

2020

Language

English

Research Group

Electronic Components, Technology and Materials

Bibliographical Note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Pages (from-to)

1-15

Publisher

Springer

ISBN (print)

978-3-030-16576-5

ISBN (electronic)

978-3-030-16577-2

Downloads counter

102

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Institutional Repository

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Abstract

In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

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