A review on the crystalline silicon bottom cell for monolithic perovskite/silicon tandem solar cells

Review (2019)

Authors

Lingling Yan Nankai University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin
C. Han Photovoltaic Materials and Devices - EEMCS , Nankai University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin
Bin Shi Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Collaborative Innovation Center of Chemical Science and Engineering
Y. Zhao Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Nankai University
Xiaodan Zhang Nankai University, Collaborative Innovation Center of Chemical Science and Engineering, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Heterojunction Crystalline silicon solar cell Homojunction Perovskite/silicon tandem
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Perovskite/silicon tandem solar cells have reached certified efficiencies of 28% (on 1 cm2 by Oxford PV) in just about 4 years, mostly driven by the optimized design in the perovskite top cell and crystalline silicon (c-Si) bottom cell. In this review, we focus on the structural adjustment of the bottom cell based on the structural evolution of monolithic perovskite/silicon tandem solar cells to improve their performance. To begin with, c-Si solar cells are classified into silicon homojunction and silicon heterojunction (SHJ) devices according to temperature tolerance, and the corresponding structural features are presented. Then, the evolution of monolithic perovskite/silicon tandem cells based on c-Si homojunction and heterojunction bottom devices is summarized. An appropriate candidate of the c-Si bottom cell for monolithic perovskite/silicon tandem cells is proposed, mainly including passivated emitter and rear cell devices, the tunnel oxide passivated contact cell, and SHJ devices. In brief, our review will emphasize the important role of the c-Si bottom cell with different passivation structures for perovskite/silicon tandem cells, which provides a guidance to enhance the performance of tandem cells.