Multiply-accumulators are key cornerstone arithmetic blocks for AI accelerators to achieve high energy efficiency, high accuracy and small silicon area, especially for edge accelerators (Fig. 1, left). The trend of edge accelerators is to use Analog and Mixed-Signal (AMS) domain circuits to improve energy efficiency by reducing voltage swing and integrating more operations into one computation unit [16]. Fig. 1 (right) shows the major issues in existing capacitor-based AMS domain Multiply-ACcumulator (MAC) designs: 1) High energy consumption brought by the high-switching-activity digital logic gates and high-voltage-swing charge-domain analog adders [3, 4]; 2) Significant accuracy loss due to the poor linearity from capacitor parasitic and device mismatch [3]; 3) Large area overhead caused by the parallel unit-capacitors in summation [4, 5].

Characterization of the genetic landscape of Alzheimer’s disease (AD) and related dementias (ADD) provides a unique opportunity for a better understanding of the associated pathophysiological processes. We performed a two-stage
genome-wide association study totaling 111,326 clinically diagnosed/‘proxy’ AD cases and 677,663 controls. We found 75 risk loci, of which 42 were new at the time of analysis. Pathway enrichment analyses confirmed the involvement of amyloid/tau pathways and highlighted microglia implication. Gene prioritization in the new loci identified 31 genes that were suggestive of new genetically associated processes, including the tumor necrosis factor alpha pathway through the linear ubiquitin chain assembly complex. We also built a new genetic risk score associated with the risk of future AD/dementia or progression from mild cognitive impairment to AD/dementia. The improvement in prediction led to a 1.6- to 1.9-fold increase in AD risk from the lowest to the highest decile, in addition to effects of age and the APOE ε4 allele.

To evaluate the effectiveness of maintenance treatments for asphalt pavement, four types of treatments, including the hot in-place recycling (HIR), milling and resurfacing (M&F), thin HMA overlay (THO) and microsurfacing (MS), were analyzed. 8 highway segments, in total 491.74 km, in Jiangsu Province in China, were investigated and the data of rutting depth (RD) in their maintenance history was collected. Based on the data of RD, the effectiveness of four treatments was quantitatively compared by three indicators, namely, performance jump (PJ), deterioration rate reduction (DRR) and average deterioration reduction rate (ADRR). Moreover, the applicability of the proposed effectiveness analyses was assessed by laboratory rutting tests with field cylindrical samples. Results indicate that the HIR is the most effective treatment, followed by M&F and THO. While the MS is the least effective treatment, whose service life is only three or four years. The findings highlight the significance of the proper traffic opening time after maintenance to avoid the weakened rutting resistance caused by high-temperature mixtures, the effect of the RD before maintenance on maintenance decision-making, and the application of high-quality RAP in the timely maintenance activities. Therefore, the performance-based maintenance strategy should be establish to improve pavement performance and extend pavement service life. Further research on the pavement performance after RAP application is necessary.

Perovskite/silicon tandem solar cells have reached certified efficiencies of 28% (on 1 cm² by Oxford PV) in just about 4 years, mostly driven by the optimized design in the perovskite top cell and crystalline silicon (c-Si) bottom cell. In this review, we focus on the structural adjustment of the bottom cell based on the structural evolution of monolithic perovskite/silicon tandem solar cells to improve their performance. To begin with, c-Si solar cells are classified into silicon homojunction and silicon heterojunction (SHJ) devices according to temperature tolerance, and the corresponding structural features are presented. Then, the evolution of monolithic perovskite/silicon tandem cells based on c-Si homojunction and heterojunction bottom devices is summarized. An appropriate candidate of the c-Si bottom cell for monolithic perovskite/silicon tandem cells is proposed, mainly including passivated emitter and rear cell devices, the tunnel oxide passivated contact cell, and SHJ devices. In brief, our review will emphasize the important role of the c-Si bottom cell with different passivation structures for perovskite/silicon tandem cells, which provides a guidance to enhance the performance of tandem cells.

A much occurring problem in the Energy Management Systems of existing buildings and HVAC services is that the measurements are unreliable. In this article a methodology is described which can be used to determine the presence of errors in energy monitoring, caused by faulty measurements. These errors can be detected and subsequently diagnosed. Detection of monitoring errors is done based on occurring symptoms. Determination of these symptoms is done using the laws of conservation of energy, mass and pressure. The diagnosis is done by using a statistical method based on Bayesian theory in which the chance of an error occurring is determined based on ( combinations of) the symptoms. The method is built in a Bayesian Belief Network (BBN) software tool. The advantage of BBN is that it is consistent with the working methods of experts in installation technology.