A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices
T Hensgens (TU Delft - QCD/Vandersypen Lab)
Uditendu Mukhopadhyay (TU Delft - QCD/Vandersypen Lab)
P.J.C. Barthelemy (QN/Quantum Transport)
Raymond F.L. Vermeulen (TU Delft - ALG/General)
R. N. Schouten (TU Delft - ALG/General)
S. Fallahi (Purdue University)
G. C. Gardner (Purdue University)
C Reichl (ETH Zürich)
W Wegscheider (ETH Zürich)
Michael J. Manfra (Purdue University)
L. M.K. Vandersypen (TU Delft - QN/Vandersypen Lab, TU Delft - QCD/Vandersypen Lab)
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Abstract
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy provides a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.