Thermal Non-Equilibrium Analysis on PN junction

Conference Paper (2020)
Author(s)

Chenshan Gao (Ministry of Education, Chongqing University)

S. Wang (TU Delft - Bio-Electronics)

Chunjian Tan (TU Delft - Electronic Components, Technology and Materials)

X. Liu (TU Delft - Electronic Components, Technology and Materials)

Quan Zhou (Ministry of Education, Chongqing University)

H. Ye (TU Delft - Electronic Components, Technology and Materials, Shenzhen Institute of Wide-bandgap Semiconductors, Chongqing University)

Research Group
Bio-Electronics
DOI related publication
https://doi.org/10.1109/ICEPT50128.2020.9202989
More Info
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Publication Year
2020
Language
English
Research Group
Bio-Electronics
Pages (from-to)
1-3
ISBN (print)
978-1-7281-6827-2
ISBN (electronic)
978-1-7281-6826-5

Abstract

At present, non-equilibrium thermodynamics is an important theory and method for studying the phenomenon of small scales. In this work, by studying the temperature changes of PN junctions under different voltage conditions and doping concentrations, the micro-scale semiconductor materials PN junctions in non-equilibrium thermodynamics and thermal phenomena are researched. It is found that under the effect of lower voltage, the temperature of the PN junction will first decrease and then increase, and as the voltage increases, this phenomenon will gradually disappear. This shows that under certain voltage conditions, the phenomenon of unbalanced junction temperature of the PN junction exists, which will provide a huge impetus for the development of the reliability of solar cells, light-emitting diodes, high-frequency devices, sensors and measurement methods.

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