Owing to the outstanding physical properties of graphene, its biosensing applications implemented by the terahertz metasurface are widely concerned and studied. Here, we present a novel design of the graphene metasurface, which consists of an individual graphene ring and an H-shaped graphene structure. The graphene metasurface exhibits a dual-resonance response, whose resonance frequency strongly varies with the geometrical parameters of the proposed metasurface, the carrier density of graphene, and the analyte composition. The transparency window, including width and position, can be artificially controlled by adjusting the geometrical parameters or the Fermi energy. Furthermore, the sensing parameters of the graphene metasurface for cancerous and normal cells are investigated, focusing on two factors, namely cell quantity and position on the metasurface. The simulated results clearly show that the theoretical sensitivity, figure of merit, and quantity of the graphene metasurface for breast cells reach 1.21 THz/RIU, 2.75 RIU (Formula presented.), and 2.43, respectively. Our findings may open up new avenues for promising applications in the diagnosis of cancers.@en

Nano copper sintering technology has great potential to be widely applied in the wide-bandgap semiconductor packaging. In order to investigate the coalescence kinetics of copper nano particles for this application, a molecular dynamic (MD) simulation was carried out at low temperature on a special model containing two substrate and multiple particles in between. Accordingly, thorough microstructure and dislocation investigation was conducted to identify the atomic-scale evolution in the system. The corresponding findings could provide evidence on the new particle-substrate sintering mechanism. Furthermore, atomic trajectories tracking method was applied to study the rotation behavior of different sized nano particles. New rotation behavior and mechanism were described. Additionally, the study on the size effect of copper particles on the sintering process and coalescence mechanism was conducted via comparing the microstructural and dislocation distribution of 3 nm, 4 nm and 5 nm models. Finally, by comparing the MSD results at low and high temperature for each model, the dominant coalescence dynamics changes were obtained.@en

This paper studied the behaviors of sintering between Ag nanoparticle (NP) and nanoflake (NF) in the same size by molecular dynamics simulation. Before the sintering simulation, the melting simulation of NF was carried out to calculate the melting points of NFs and investigate the thermostability of NF. The Lindemann index and potential energy showed that the melting points of NF were significantly size-dependent. During the heating process, the sharp corner of NF transformed to the round corner and could bend spontaneously lower than melting points. In sintering simulation, the sintering process of NF-NP showed a metastable stage before equilibrium. Under low sintering temperature (500 K), the degree of plasticity sintering mechanism of NF-NP was more prominent, which generated more defects, such as amorphous atoms, dislocations, and stacking faults, than NP-NP. The sintered products of NF-NP also presented a better neck size and shrinkage than NP-NP in the same size. A new sintering behavior was observed: NF was bent toward the NP during the sintering. The bending curvature of NF increased as the thickness or the length/width decreased. For the NF with the ratio of length/width to thickness of 5:1, bending could further significantly facilitate neck growth. At 700 K, the plasticity mechanism dominated both the sintering processes of NF-NP and NP-NP. And NF-NP showed a larger diffusivity than NP-NP. At last, we investigated the effects of crystal misorientation, and found that a tilted grain boundary generated in the neck. The NF had the trend of rotation to decrease the crystal misorientation.@en

As a promising technology for high-power and high-temperature power electronics packaging, nanocopper (nanoCu) paste sintering has recently received increasing attention as a die-attachment. The high-temperature deformation of sintered nanoCu paste and its underlying mechanisms challenge the reliability of high-power electronics packaging. In this study, the tensile deformation behaviors of sintered nanoCu paste were firstly characterized by high-temperature tensile tests performed at various temperatures and strain rates ranging from 180 °C to 360 °C, 1 × 10−4 s−1 to 1 × 10−3 s−1 respectively. It was found that the elastic modulus and tensile strength decreased at the higher tensile temperature while the ductility increased accordingly. The highest elastic modulus and tensile strength results were 12.15 GPa and 46.97 MPa, respectively. Second, failure analysis was conducted based on the fracture surface after tensile testing. Recrystallization was revealed as the main factor for ductility improvement. Subsequently, an Anand model was fitted by stress-strain curves to describe the tensile constitutive behavior of the sintered nanoCu paste. Multi-scale modelling techniques also investigated the impact of tensile temperature and strain rate on the tensile response. Molecular dynamics simulation was implemented using a hemispherical Cu nanoparticle model to reveal the properties from an atomistic perspective. In addition, a two-dimensional equivalent model was further established by using a stochastically distributed void morphology. The multi-scale modelling techniques successfully describe the evolution of tensile response to the different tensile temperatures and strain rates. Besides, the equivalent model with random void morphology was demonstrated as the finite element simulation results were highly consistent with the high-temperature tensile experiments.@en

The power semiconductor joining technology through sintering of copper nanoparticles is well-suited for die attachment in wide bandgap (WBG) semiconductors, offering high electrical, thermal, and mechanical performances. However, sintered nanocopper will be prone to degradation resulting from corrosion in sulfur-containing corrosive environments such as offshore areas. In this study, experiments, including aging test and corrosion characterization, and simulations based on density functional theory (DFT) studies were conducted to explore the corrosion behavior and mechanism of elemental sulfur (S8) and hydrogen sulfide (H2S) on sintered nanocopper. The experimental results indicated that loose corrosion products were observed on the sintered nanocopper during the ageing process involving S8, and compact layered corrosion products formed during the ageing process involving H2S. Furthermore, similar corrosion product compositions (Cu2O, Cu2S, CuO, CuS, and potentially Cu2SO4 or CuSO4) were observed in both the S8- and H2S-ageing processes. However, the S8-ageing process exhibited more noticeable corrosion penetration. This was explained in simulations results: the unsaturated Cu sites on the oxide layer [Cu2O(1 1 1)] of the sintered nanocopper could adsorb both H2S and S8, while the saturated Cu sites only exhibited the potential to adsorb S8.@en

The power semiconductor joining technology through sintering of copper nanoparticles is well-suited for die attachment in wide bandgap (WBG) semiconductors, offering high electrical, thermal, and mechanical performances. However, sintered nanocopper will be prone to degradation resulting from corrosion in sulfur-containing corrosive environments such as offshore areas. In this study, experiments, including aging test and corrosion characterization, and simulations based on density functional theory (DFT) studies were conducted to explore the corrosion behavior and mechanism of elemental sulfur (S8) and hydrogen sulfide (H2S) on sintered nanocopper. The experimental results indicated that loose corrosion products were observed on the sintered nanocopper during the ageing process involving S8, and compact layered corrosion products formed during the ageing process involving H2S. Furthermore, similar corrosion product compositions (Cu2O, Cu2S, CuO, CuS, and potentially Cu2SO4 or CuSO4) were observed in both the S8- and H2S-ageing processes. However, the S8-ageing process exhibited more noticeable corrosion penetration. This was explained in simulations results: the unsaturated Cu sites on the oxide layer [Cu2O(1 1 1)] of the sintered nanocopper could adsorb both H2S and S8, while the saturated Cu sites only exhibited the potential to adsorb S8.@en

Cu-Ag core-shell (CS) nanoparticle (NP) is considered as a cost-effective alternative material to nano silver sintering material in die attachment application. To further reduce the cost, the thickness of the Ag shell can be adjusted. Whereas the shell thickness will also affect the thermal stability of the Cu-Ag CSNPs. In this study, molecular dynamics simulation was applied to study the thickness effect on the thermal behavior of Cu-Ag CSNPs. The melting points of CSNPs and Pure NPs can be determined by the evolutions of Potential Energy (PE), and the Lindemann index (LI) of the system. The results indicated that the melting points of CS NPs were lower than monometallic NP and the melting point of CS NP is influenced by the size of the Cu core and the number of lattice mismatches. Moreover, the distribution of atoms’ LI showed that the premelting point is independent of shell thickness. However, the fraction of atoms that occurred premelting is increased with the decrease of the shell thickness. Otherwise, we also simulated the sintering process of double CS NPs with equal size.@en

Short-wave ultraviolet (also called UVC) irradiation is a well-adopted method of viral inactivation due to its ability to damage genetic material. A fundamental problem with the UVC inactivation method is that its mechanism of action on viruses is still unknown at the molecular level. To address this problem, herein we investigate the response mechanism of genome materials to UVC light by means of quantum chemical calculations. The spectral properties of four nucleotides, namely, adenine, cytosine, guanine, and uracil, are mainly focused on. Meanwhile, the transition state and reaction rate constant of uracil molecules are also considered to demonstrate the difficulty level of adjacent nucleotide reaction without and with UVC irradiation. The results show that the peak wavelengths are 248.7 nm, 226.1 nm (252.7 nm), 248.3 nm, and 205.8 nm (249.2 nm) for adenine, cytosine, guanine, and uracil nucleotides, respectively. Besides, the reaction rate constants of uracil molecules are 6.419 × 10−49 s−1 M−1 and 5.436 × 1011 s−1 M−1 for the ground state and excited state, respectively. Their corresponding half-life values are 1.56 × 1048 s and 1.84 × 10−12 s. This directly suggests that the molecular reaction between nucleotides is a photochemical process and the reaction without UVC irradiation almost cannot occur.@en

Combining the first principles calculations and the non-equilibrium Green’s function formalisms, we decipher the structural, electronic, and transport properties of boron phosphide (BP) with hydrogenation. Hydrogenated BP monolayer is an indirect semiconductor with a wide-bandgap of 3.76 eV that is favorable in power devices. We find that the electronic properties are dependent of the stacking orders and the binding strength of the AA-, AB-, and AE-stacked patterns are strongest in the investigated configurations. Under the external E-field, the bandgaps of hydrogenated BP bilayer show a quasi-parabolic function and a feature of the semiconductor-metallic transition. Besides, when we apply a tensile strain on hydrogenated BP bilayer, its bandgap linearly decreases with the increasing of the strain strength along the zigzag and armchair directions. The strain energies further confirm that hydrogenated BP has an excellent characteristic of elastic deformation, being independent of the stacking orders and strain orientation. The transport calculations exhibit various responses to the different two-probe configurations, which indicates that hydrogenated BP possesses the feature of transmission anisotropy. Owing to the nontrivial tunability and transport feature, the hydrogenated BP materials may have tremendous prospects to be applied in micro-/nano-devices with high consumption.@en

Laser-induced graphene (LIG) has aroused a wide range of research interests ranging from micro-nano energy devices to the Internet of Things (IoT). Nevertheless, the non-degradability of most-used synthetic polymer carbon sources poses a serious threat to the environment. In this work, ecofriendly chitosan-based derivatives, including carboxymethyl chitosan (CMCS), chitosan oligosaccharide, and chitosan hydrochloride, are successfully converted into LIGs for the first time via a convenient one-step CO2 laser engraving at ambient air. The obtained LIGs are characterized by a three-dimensional hierarchical porous structure and exhibit good sheet conductivity. The consecutive carbonization and graphitization mechanism of target precursors induced by laser heat accumulation is also deeply discussed. Besides, based on a mechanically reliable LIG/CMCS composite film and tribo-negative acrylic/polyimide anti-layers, two contact-separation mode triboelectric nanogenerators are built and their power densities range from 1.44 to 2.48 mW cm-2. These devices with long cycle life can be used for low-frequency mechanical energy harvesting and commercial capacitance charging, which could be potentially applied in the wireless sensor network nodes. Such a family of chitosan derivatives paves a new route for LIG synthesis and provides new ideas for ecofriendly LIG electronics.@en

During operation in environments containing hydrogen sulfide (H2S), such as in offshore and coastal environments, sintered nanoCu in power electronics is susceptible to degradation caused by corrosion. In this study, experimental and molecular dynamics (MD) simulation analyses were conducted to investigate the evolution and mechanism of H2S-induced corrosion of sintered nanoCu, and bulk Cu was used as the reference. The following results are obtained: (1) Both sintered nanoCu and bulk Cu reacted with O2 prior to reacting with H2S, forming Cu2O, Cu2S, CuO, and CuS. In addition, sintered nanoCu exhibited more severe corrosion. (2) For both sintered nanoCu and bulk Cu, H2S-induced corrosion resulted in the deterioration of electrical, thermal, and mechanical properties, and sintered nanoCu experienced a greater extent of deterioration. (3) As was ascertained through Reactive Force Field (ReaxFF) MD simulations, the penetration of H2S and O2 combined with the upward migration of Cu resulted in the formation of a corrosion film. In addition, compared to bulk Cu, the H2S and O2 penetration in the sintered nanoCu structure was observed to occur to a greater depth, accounting for the more pronounced performance degradation.@en

Hexagonal boron nitride (BN) is often used as filler to improve the thermal conductivity of polymer matrix due to its high thermal conductivity. However, previously reported BN-based composites always have a high in-plane thermal conductivity, which is not beneficial for vertical heat dissipation. In addition, high BN content results in the deterioration of the mechanical properties. Here, we report a feasible method to prepare a BN/silicone rubber (SiR) composite with oriented BN in organosilicon matrix via a vacuum-assisted self-assembly technique. The BN/SiR composite displays a 1270% higher (2.74 W/(m·K)) thermal conductivity than that of neat organosilicon matrix (0.20 W/(m·K)). The oriented BN nanosheets increase the polymer's adhesive force and exhibit excellent compression cycle performance. In turn, these features support its superiority as thermal interface material in the light-emitting diode chips heat dissipation application.@en

The fabrication of flexible pressure sensors with low cost, high scalability, and easy fabrication is an essential driving force in developing flexible electronics, especially for high-performance sensors that require precise surface microstructures. However, optimizing complex fabrication processes and expensive microfabrication methods remains a significant challenge. In this study, we introduce a laser pyrolysis direct writing technology that enables rapid and efficient fabrication of high-performance flexible pressure sensors with a micro-truncated pyramid array. The pressure sensor demonstrates exceptional sensitivities, with the values of 3132.0, 322.5, and 27.8 kPa-1 in the pressure ranges of 0-0.5, 0.5-3.5, and 3.5-10 kPa, respectively. Furthermore, the sensor exhibits rapid response times (loading: 22 ms, unloading: 18 ms) and exceptional reliability, enduring over 3000 pressure loading and unloading cycles. Moreover, the pressure sensor can be easily integrated into a sensor array for spatial pressure distribution detection. The laser pyrolysis direct writing technology introduced in this study presents a highly efficient and promising approach to designing and fabricating high-performance flexible pressure sensors utilizing micro-structured polymer substrates.@en

The rapid development of power electronics has challenged the thermal integrity of semiconductor packaging. Further developments in this domain can be supported significantly by utilizing fast and flexible thermal characteristic evaluation. This study employs the transient dual interface method (TDIM) to characterize and compare the thermal resistance of Ag- and Cu-sintered die-attach joints using an in-house developed thermal test chip (TTC). The proposed TTC with 82.5% active area achieves a temperature sensitivity of 12 Ω/K and maximum power of 360 W per cell, which are 50% and 44% higher than the state-of-the-art, respectively. The uniformity of the temperature distribution (1 °C at 68 W) is verified by infrared thermography. The cost-effective manufacturing process allows the design to be applied to any substrate, such as SiC or GaN. Ag and Cu sintering is performed to bond the TTC on a Cu substrate, and the junction-to-case thermal resistance of the sintered structures is extracted. The lowest junction-to-case thermal resistance of 0.144 K/W is measured for the device sintered using Ag paste. Meanwhile, the Cu sintered structure exhibits a comparable value of 0.158 K/W. The proposed TTC in combination with TDIM accelerates the introduction of novel and cost-effective materials such as Cu.@en

Nano-copper sintering is one of new die-attachment and interconnection solutions to realize the wide bandgap semiconductor power electronics packaging with benefits on high temperature, low inductance, low thermal resistance and low cost. Aiming to assess the high-temperature reliability of sintered nano-copper die-attachment and interconnection, this study characterized the mechanical properties of sintered nano-copper particles using the high-temperature nanoindentation tests. The results showed that: firstly, the hardness and indentation modulus of the sintered nano-copper particles increased rapidly when the loading rate increased below 0.2 mN·s−1 and then stabilized, and decreased with increased applied load up to 30 mN. Next, by extracting the yield stress and strain hardening index, a plastic stress–strain constitutive model at room temperature for sintered nano-copper particles was obtained. Finally, the high temperature nanoindentation tests were performed at 140 ˚C–200 ˚C on the sintered nano-copper particles prepared under different assisted pressures, which showed that a high assisted pressure resulted in the reduced temperature sensitivity of hardness and indentation modulus. The creep tests indicated that high operation temperature resulted in a high steady-state creep rate, which negatively impacted the creep resistance of sintered nano-copper particles, while the higher assisted pressure could improve the creep resistance.@en

The continuous trend to integrate more multi-functions in a package often involves, Heterogeneous Integration of multi-functional blocks in some kind of 3D stacking. The conventional flip chip for die-on-substrate technology applies solder for integration. However, solder joint integration has the disadvantages of restricting height, reflow issues and re-melting at high operating temperatures. Nanometallic particle sintering offers a potential solution for these solder related issues. Nanometallic particle sintering occurs at low temperature and does not reflow and melt at higher temperatures. Hence, it can be applied for quite precise alignment and integration technologies, such as photonic components on silicon for harsh environment applications. In order to test this concept, we use sapphire and Si wafers with different mechanical properties, which can lead to the coefficient of thermal expansion mismatch. The sapphire chip can operate at a higher temperature applied for ultraviolet photonics application. This report describes a novel approach using copper nanoparticles paste patterned through photolithographic stencil printing. The photoresist acts as the stencil mask, and a photoresist lift-off process is applied to strip the photoresist stencil. This process has the advantages of lithographic form factor and precision and provides a chip to chip interconnect with a standard height of 20 µm.@en

Recent reports focus on the hydrogenation engineering of monolayer boron phosphide and simultaneously explore its promising applications in nanoelectronics. Coupling density functional theory and finite element method, we investigate the bowtie triangle ring microstructure composed of boron phosphide with hydrogenation based on structural and performance analysis. We determine the carrier mobility of hydrogenated boron phosphide, reveal the effect of structural and material parameters on resonance frequencies, and discuss the variation of the electric field at the two tips. The results suggest that the mobilities of electrons for hydrogenated BP monolayer in the armchair and zigzag directions are 0.51 and 94.4 cm2·V−1·s−1, whereas for holes, the values are 136.8 and 175.15 cm2·V−1·s−1. Meanwhile, the transmission spectra of the bowtie triangle ring microstructure can be controlled by adjusting the length of the bowtie triangle ring microstructure and carrier density of hydrogenated BP. With the increasing length, the transmission spectrum has a red-shift and the electric field at the tips of equilateral triangle rings is significantly weakened. Furthermore, the theoretical sensitivity of the BTR structure reaches 100 GHz/RIU, which is sufficient to determine healthy and COVID-19-infected individuals. Our findings may open up new avenues for promising applications in the rapid diagnosis of COVID-19.@en

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (d (Formula presented.) /d (Formula presented.)) from a peak to zero. The simulation results show that the reverse recovery peak current (I (Formula presented.)) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.@en

The wide-bandgap semiconductors represented by GaN have a broad application prospect because of their high service temperature and high switch frequency. Quad-Flat-No-Lead (QFN) Package is currently one of the mainstream packaging methods due to its low cost and high efficiency. However, the low reliability of QFN used in GaN devices is still a crucial problem caused by elevated temperatures and the thermal stress induced by the mismatch of coefficient of thermal expansion (CTE). Therefore, it is necessary to control the temperature inner the package and increase the mechanical property of the bonding layer. In this paper, the finite element method (FEM) with thermal-mechanical coupling is performed to optimize the reliability of the bonding layer by adopting sinter nano Cu and silver. Based on the conventional QFN package module, we tried to add different metallization on the bonding surface to decrease the influence of CTE mismatch. We should note that the Anand viscoplastic model was used in the materials of Sintered Ag and lead-free solder paste presented by SAC305, which were the most commonly used in die-attachment. The results showed that the utilization of nano copper/silver paste could hardly facilitate thermal performance although sintered Ag had excellent thermal conductivity. Since the Anand modules of Ag and SAC305 were different, there were some impacts on the stress distribution and deformation. During the bonding process, a large thermal stress generated between die-attachment layer and Package or the PCB. The die-attachment layer formed by nano Ag paste suffered the smaller thermal stress because its CTE is comparable to that of thermal pad. In terms of sintered Ag, the bonding layer generated more elastic strain. As the deformation recovered to initial stage, the stress decreased because of the elastic strain. And we also found that the Ag metallization could decreased the maximum stress of model at heating stage. But Ag metallization suffered larger thermal stress as the temperature decreased. The selection of connection materials and metallization are a crucial part of design the structure of electronic package. And this paper could provide a reference for optimize the package structure to further improve their reliability in future works.@en

As the concentration of acetone (C3H6O) in exhaled gas of diabetics is significantly higher than that of healthy people. Here, the sensing performance of X doped MoSe2 (X–MoSe2, X = Ti, Ni and Cu) for acetone is studied theoretically. It is found that Ti–MoSe2 shows absolute advantages in both adsorption energy and charge transfer. Additionally, the changes of bandgap for C3H6O/Ti–MoSe2 in the adsorption process are the largest in all adsorption systems, indicating it will produce the largest electrical signal that can be detected. Besides, the co-adsorption system (consisting of C3H6O, H2O, CO2, N2 and O2) will be more stable after O2 is removed and the adsorption site occupied by acetone restricts the contact of other disturbing gases with Ti–MoSe2. Importantly, comparing with the reported acetone sensing materials ((110) face of SnO2, (MgO)12-graphene and oxygen-plasma-treated ZnO (ZnO–O)), Ti–MoSe2 demonstrates its superiority in terms of the absolute value of charge transfer (0.37 e) and adsorption energy (2.42 eV). All these results show that Ti–MoSe2 is expected to become the reliable sensing material for acetone and has enormous potential for the application in noninvasive and rapid detection of type-1 diabetes.@en