Multi Physics Simulation of Wafer Bonding with Nano Copper Paste
Shizhen Li (Southern University of Science and Technology )
X. Liu (Southern University of Science and Technology , TU Delft - Electronic Components, Technology and Materials)
Chenshan Gao (Southern University of Science and Technology )
S. Wang (TU Delft - Bio-Electronics, Southern University of Science and Technology )
Jun Li (Sky Chip Interconnection Technology Co)
Huaiyu Ye (Southern University of Science and Technology )
Kouchi Zhang (TU Delft - Electronic Components, Technology and Materials)
Shaohui Wu (AKMMeadville Electronics (Xiamen) Co.,Ltd)
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Abstract
The significance of wafer bonding is fundamental to the progression of electronic systems. Common fabrication techniques for Cu pillars play a crucial role in establishing resilient and efficient interconnects within semiconductor devices. It is imperative to explore the potential of nano-copper as an alternative material to overcome limitations associated with conventional copper. The use of nano copper paste in manufacturing has the potential to simplify the process, potentially reducing the number of steps compared to conventional methods. This study delves into the intricacies of wafer-level packaging (WLP), with a particular focus on hybrid bonding processes utilizing nanocopper sintering. Through the application of Finite Element Method (FEM) simulations, we investigate the stress distribution and thermal dynamics inherent in the sintering and hybrid bonding of both bulk copper and nanocopper materials. Our findings illuminate the superior mechanical and thermal properties of nanocopper, which contribute to reduced stress concentrations and enhanced mechanical integrity in semiconductor packaging. The research highlights the pivotal role of nanocopper sintering in advancing WLP technologies, offering insights into optimizing sintering and bonding parameters for improved device reliability and performance.