With the rapid development of science and technology, the Internet of Things and big data have become important forces driving the progress of modern technology. The evolution of these technologies has spurred the widespread application of smart devices and services, bringing revolutionary changes to various industries. In this context, flexible sensors have become a key bridge between the physical and digital worlds because of their unique bendability and high adaptability. They not only provide real-time data collection and transmission, but also serve a crucial role in health monitoring and environmental detection due to their lightweight and flexible characteristics. As fabrication technologies continue to innovate, flexible sensors are evolving towards miniaturization, integration, and customization. Although flexible sensors based on a variety of micro- and nanostructures and innovative materials have made significant progress in recent years, challenges still exist in terms of sensor performance, integration capability, and fabrication efficiency. To address these challenges, we utilized ultraviolet (UV) laser direct writing technology to efficiently achieve the microstructure fabrication and material modification required for the sensing capabilities of flexible sensors by precisely controlling the time, space, and energy of the laser. Correspondingly, we developed innovative fabrication technologies based on UV laser direct writing for different types of flexible sensors, including pressure sensors, strain sensors, gas sensors, and temperature sensors. The application of these technologies not only improves the fabrication efficiency but also enhances the sensor performance to meet the demands for customization and miniaturization.

In this paper, the effect of thermal stress on the reliability of the gate dielectric layer of SiC MOSFET at high short-circuit temperature is studied. By modeling and simulation, different shapes and materials (SiO2, BPSG, Si3N4) of the dielectric layer were compared regarding their stress distribution effects. Results indicate that elliptical gate structures and dual-layer ILD configurations perform better under thermal stress than conventional designs, particularly with Si3N4 as the inner layer and BPSG as the outer layer. This optimization scheme aims to enhance the reliability of SiC MOSFETs.

This study introduces a novel strategy for fabricating flexible nitrogen dioxide (NO₂) gas sensors based on Indium Oxide (In₂O₃) nanoparticles (NPs) employing selective reduction laser sintering (SRLS) technology. The SRSL technology utilizes ultraviolet (UV) laser selective reduction sintering to precisely and rapidly create oxygen vacancy (OV) defects in In₂O₃ NPs. These oxygen vacancies (OVs) enhance the active adsorption sites and contribute additional free electrons, significantly improving sensor performance at room temperature. The sensors demonstrate excellent response (S = 460.9 at 10 ppm), rapid response/recovery times (τ_resp/τ_reco = 27/570 s), and superior selectivity (response ratio > 400), in addition to robust resistance to light and humidity (under ppm-level NO₂ gas). The sensors also exhibit a low detection limit (200 ppb), a high signal-to-noise ratio (94.8 dB), and good long-term stability (25 days). Moreover, under photo-assisted conditions, the recovery speed of the sensors is further improved. This technology not only provides an innovative strategy for the development of high-performance flexible NO₂ gas sensors but also broadens the application potential of laser direct writing (LDW) technology in advanced materials and sensor fabrications.

With the rapid advancement of power semiconductor packaging technologies, Smart P2 Packagingaging has emerged as a pivotal innovation for enhancing system performance and miniaturization. This study systematically investigates the thermal conduction characteristics and stress distributions of copper-filled vias (CFVs) in Smart P2Pack frontal interconnects through coupled thermal-mechanical finite element analysis. Results indicate that increasing CFV diameter enhances vertical heat conduction but causes localized heat accumulation and stress concentration due to the low thermal conductivity of encapsulation materials, elevating interfacial failure risks. Conversely, expanding CFV pitch promotes dispersed heat flow and reduces chip temperature but concurrently lowers local structural stiffness and exacerbates stress concentration. Optimal CFV design thus requires balancing thermal diffusion performance and mechanical constraints to ensure structural reliability and thermal stability.

Real-time pH and oxygen concentration sensing is critical for monitoring tissue damage and organ health; however, there is no report to date in such context of a single device that can simultaneously detect both pH and oxygen changes. This paper presents the development of a single optical sensor device that can simultaneously and reversibly respond to changes in both pH and oxygen concentration. The proposed optical sensor integrates both pH- and oxygen-sensitive probes, and is optimized to achieve minimal cross-sensitivity during simultaneous measurements. This approach enables high accuracy in early detection of chemical correlates of tissue or organ damage, improving screening and efficacy in organ transplants.

The significance of wafer bonding is fundamental to the progression of electronic systems. Common fabrication techniques for Cu pillars play a crucial role in establishing resilient and efficient interconnects within semiconductor devices. It is imperative to explore the potential of nano-copper as an alternative material to overcome limitations associated with conventional copper. The use of nano copper paste in manufacturing has the potential to simplify the process, potentially reducing the number of steps compared to conventional methods. This study delves into the intricacies of wafer-level packaging (WLP), with a particular focus on hybrid bonding processes utilizing nanocopper sintering. Through the application of Finite Element Method (FEM) simulations, we investigate the stress distribution and thermal dynamics inherent in the sintering and hybrid bonding of both bulk copper and nanocopper materials. Our findings illuminate the superior mechanical and thermal properties of nanocopper, which contribute to reduced stress concentrations and enhanced mechanical integrity in semiconductor packaging. The research highlights the pivotal role of nanocopper sintering in advancing WLP technologies, offering insights into optimizing sintering and bonding parameters for improved device reliability and performance.

In recent years, flexible strain sensors based on metal cracks have garnered significant interest for their exceptional sensitivity. However, striking a balance between sensitivity and detection range remains a significant challenge, which often limits its wider application. Herein, we introduce an innovative laser transmission pyrolysis technology to fabricate high-performance flexible strain sensors based on (Au) metal cracks with a microchannel array on the PDMS surface. The fabricated flexible strain sensors exhibit high sensitivity, wide detection range, precise strain resolution, fast response and recovery times, and robust durability. Furthermore, this technology has potential applications in microfluidics, microelectromechanical systems, and optical sensing.

In this study, a convenient chitosan oligosaccharide laser lithograph (COSLL) technology was developed to fabricate laser-induced graphene (LIG) electrodes and flexible on-chip microsupercapacitors (MSCs). With a simple one-step CO₂ laser, the pyrolysis of a chitosan oligosaccharide (COS) and in situ welding of the generated LIGs to engineering plastic substrates are achieved simultaneously. The resulting LIG products display a hierarchical porous architecture, excellent electrical conductivity (6.3 Ω sq^-1), and superhydrophilic properties, making them ideal electrode materials for MSCs. The pyrolysis-welding coupled mechanism is deeply discussed through cross-sectional analyses and finite element simulations. The MSCs prepared by COSLL exhibit considerable areal capacitance of over 4 mF cm^-2, which is comparable to that of the polyimide-LIG-based counterpart. COSLL is also compatible with complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical system (MEMS) processes, enabling the fabrication of LIG/Au MSCs with comparable areal capacitance and lower internal resistance. Furthermore, the as-prepared MSCs demonstrate excellent mechanical robustness, long-cycle capability, and ease of series-parallel integration, benefiting their practical application in various scenarios. With the use of eco-friendly biomass carbon source and convenient process flowchart, the COSLL emerges as an attractive method for the fabrication of flexible LIG on-chip MSCs and various other advanced LIG devices.

This research introduces a novel and convenient technology, chitosan oligosaccharide laser lithography (COSLL), enabling the creation of flexible laser-induced graphene (LIG) on-chip microsupercapacitors (MSCs) using environmentally friendly chitosan-class polymers for the first time. MSCs prepared through COSLL exhibit a significant areal capacitance exceeding 4 mF cm^-2, comparable to that of the polyimide-LIG-based counterparts. COSLL seamlessly integrates with the micro-nano thin-film process, allowing the capacitance of resulting LIG/Au MSCs to be further increased to about 8 mF cm^-2. Leveraging an eco-friendly biomass carbon source and featuring a convenient process flowchart, COSLL emerges as an appealing method for fabricating flexible LIG on-chip MSCs.

Flexible strain sensors play a crucial role in health monitoring, smart wearable devices, and human–machine interaction. Three-dimensional surface evaluation methods for strain sensors offer advantages by being closer to actual strain, featuring a larger working range, and being more suitable for multidirectional strain. In this study, a three-dimensional (3D) surface strain sensor based on polydimethylsiloxane/laser-induced graphene (PDMS/LIG) composite films has been developed. The electromechanical properties of this sensor, encompassing 3D strain range and sensitivity, can be adjusted by manipulating laser parameters and LIG patterns. The key to attaining these specific characteristics lies in the intentional design of crack types and orientations on the sensor's surface. Remarkably, the line-vertical (LV) sensor exhibits outstanding sensitivity with a GF of 211.3. The line-parallel (LP) sensor achieves a GF of 115.1. Additionally, it demonstrates a stretching range of 25% and maintains stable performance over an extensive number of strain/release test cycles (more than 3000 cycles). With these advantages, the 3D strain sensor can not only be applied in human activity monitoring but also monitoring pressure within microchannels in microfluidic chips, suggesting promising applications in the health and medical fields.

This study explores the potential of pressureless nano-copper sintering for power chip interconnections. As electronics evolve towards miniaturization and higher power density, traditional interconnection materials such as nano-silver, despite their excellent thermal and electrical properties, face challenges like high cost and susceptibility to electromigration. Nano-copper, with comparable electrical conductivity and superior thermal performance at a lower cost, emerges as a promising alternative. The study examines the impact of sintering atmosphere and temperature on shear strength. Results show that nitrogen-protected environments significantly enhance bonding by preventing oxidation, while samples sintered in air exhibit minimal strength due to surface oxidation. Additionally, sintering at 230°C provides stronger bonds compared to 200°C, indicating improved diffusion and bonding at higher temperatures. SEM analysis of samples sintered at 300°C demonstrates optimal bonding, with minimal voids, making 300 ° C an ideal sintering temperature for reliable power chip packaging using nano-copper.

This study introduces an innovative approach for fabricating flexible nitrogen dioxide (NO₂) gas sensors based on In2O3 nanoparticles (NPs) using selective reduction laser sintering (SRLS) technology. The SRLS technology enables specific chemical reduction reactions during the sintering process, achieving fabrication and control of oxygen vacancy defects and the porous structure in the In₂O₃ sintering region. The sensor exhibits exceptionally high sensitivity, fast response/recovery times, and superior selectivity for NO₂ gas detection, particularly at room temperature. Compared with traditional NO₂ gas sensor fabrication methods, this technology not only provides a potential way to fabricate highperformance NO₂ gas sensors but also further expands the application potential of laser direct writing (LDW) technology in the fields of advanced materials and sensor fabrication.

This study introduces a high-performance flexible temperature sensor prepared using laser-induced graphene (LIG) doped with nickel oxide (NiO) nanoparticles (NPs). Unlike conventional LIG surface doping methods, we developed a nickel oxide-doped LIG flexible temperature sensor by introducing NiO NPs into a polyimide (PI) precursor solution cured into a film followed by ultraviolet (UV) laser treatment. This approach achieves a more stable and uniform doping process while further improving the sensing performance of LIG-based temperature sensors. Over a prospective temperature detection range (30-100 °C), the sensitivity of the NiO-doped LIG temperature sensor is significantly improved from -0.064% °C-¹ to -0.079% °C-¹, an improvement of 19.3%, compared to that of the intrinsic LIG temperature sensor, while maintaining high linearity (R2 = 0.999) as well as excellent temperature stability and reliability. This research not only enhances the performance of flexible temperature sensors based on LIG but also paves new pathways for its industrial production in various application fields.

The fabrication of flexible pressure sensors with low cost, high scalability, and easy fabrication is an essential driving force in developing flexible electronics, especially for high-performance sensors that require precise surface microstructures. However, optimizing complex fabrication processes and expensive microfabrication methods remains a significant challenge. In this study, we introduce a laser pyrolysis direct writing technology that enables rapid and efficient fabrication of high-performance flexible pressure sensors with a micro-truncated pyramid array. The pressure sensor demonstrates exceptional sensitivities, with the values of 3132.0, 322.5, and 27.8 kPa^-1 in the pressure ranges of 0-0.5, 0.5-3.5, and 3.5-10 kPa, respectively. Furthermore, the sensor exhibits rapid response times (loading: 22 ms, unloading: 18 ms) and exceptional reliability, enduring over 3000 pressure loading and unloading cycles. Moreover, the pressure sensor can be easily integrated into a sensor array for spatial pressure distribution detection. The laser pyrolysis direct writing technology introduced in this study presents a highly efficient and promising approach to designing and fabricating high-performance flexible pressure sensors utilizing micro-structured polymer substrates.

Laser-induced graphene (LIG) has aroused a wide range of research interests ranging from micro-nano energy devices to the Internet of Things (IoT). Nevertheless, the non-degradability of most-used synthetic polymer carbon sources poses a serious threat to the environment. In this work, ecofriendly chitosan-based derivatives, including carboxymethyl chitosan (CMCS), chitosan oligosaccharide, and chitosan hydrochloride, are successfully converted into LIGs for the first time via a convenient one-step CO₂ laser engraving at ambient air. The obtained LIGs are characterized by a three-dimensional hierarchical porous structure and exhibit good sheet conductivity. The consecutive carbonization and graphitization mechanism of target precursors induced by laser heat accumulation is also deeply discussed. Besides, based on a mechanically reliable LIG/CMCS composite film and tribo-negative acrylic/polyimide anti-layers, two contact-separation mode triboelectric nanogenerators are built and their power densities range from 1.44 to 2.48 mW cm^-2. These devices with long cycle life can be used for low-frequency mechanical energy harvesting and commercial capacitance charging, which could be potentially applied in the wireless sensor network nodes. Such a family of chitosan derivatives paves a new route for LIG synthesis and provides new ideas for ecofriendly LIG electronics.

Short-wave ultraviolet (also called UVC) irradiation is a well-adopted method of viral inactivation due to its ability to damage genetic material. A fundamental problem with the UVC inactivation method is that its mechanism of action on viruses is still unknown at the molecular level. To address this problem, herein we investigate the response mechanism of genome materials to UVC light by means of quantum chemical calculations. The spectral properties of four nucleotides, namely, adenine, cytosine, guanine, and uracil, are mainly focused on. Meanwhile, the transition state and reaction rate constant of uracil molecules are also considered to demonstrate the difficulty level of adjacent nucleotide reaction without and with UVC irradiation. The results show that the peak wavelengths are 248.7 nm, 226.1 nm (252.7 nm), 248.3 nm, and 205.8 nm (249.2 nm) for adenine, cytosine, guanine, and uracil nucleotides, respectively. Besides, the reaction rate constants of uracil molecules are 6.419 × 10⁻⁴⁹ s⁻¹ M⁻¹ and 5.436 × 10¹¹ s⁻¹ M⁻¹ for the ground state and excited state, respectively. Their corresponding half-life values are 1.56 × 10⁴⁸ s and 1.84 × 10⁻¹² s. This directly suggests that the molecular reaction between nucleotides is a photochemical process and the reaction without UVC irradiation almost cannot occur.

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.

Flexible strain sensors based on nanomaterials have sparked a lot of interest in the field of wearable smart electronics. Laser induced graphene (LIG) based sensors in particular stand out due to their straightforward fabrication procedure, three-dimensional porous structures, and exceptional electromechanical capabilities. Recent studies have focused on LIG composites, however, it is still difficult to achieve great sensitivity and excellent linearity in a wide linear working range. Herein, a strain sensor with high sensitivity and good linearity is prepared in this work, which was realized by carbonizing the polyimide film coated with HfSe₂ to obtain three-dimensional porous graphene nanosheets decorated with HfSe₂ (HfSe₂/LIG). After being transferred to the flexible substrate of Ecoflex, it exhibits high stretchability, hydrophobicity and robustness, and obtains excellent electromechanical properties. The HfSe₂/LIG strain sensor demonstrated high sensitivity (gauge factor, GF ≈ 46), a low detection limit (0.02%), good linearity (R² = 0.99) in a large working range (up to 30%), and a quick response time (0.20 s). Additionally, it exhibits good stability and consistent behavior across a large number of strain/release test cycles (>3000 cycles). With these benefits, the sensor can be used to monitor various limb movements (including finger, wrist and neck movements) and minute artery activity, and can generate reliable signals. Therefore, the HfSe₂/LIG-based sensor has enormous potential for use in wearable intelligent electronics and movement monitoring.

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (d (Formula presented.) /d (Formula presented.)) from a peak to zero. The simulation results show that the reverse recovery peak current (I (Formula presented.)) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.

Substrate metallization is a crucial factor affecting the mechanical properties of sintered nanoparticles in microelectronics applications, as it is essential for ensuring good adhesion between the substrate and the sintered material. In this study, we investigated the influence of metallization on pressure-assisted nanocopper sintering and analyzed the related mechanism of interaction using experiments and molecular dynamics simulation. In the first session, we bonded dummy dies on various substrates, including bare Cu, and substrates with Ag or Au metallization by nanocopper pressure-assisted sintering. The mechanical properties of the bonding layers were estimated using shear strength and SEM image analysis of fracture and cross-section morphologies under different sintering conditions. We found that the group of Cu-bare Cu have better bonding strength as the sintering temperature or assisted pressure is not high enough. However, as more energy input to the bonding layer, such as higher temperature or larger sintering pressure, the mechanical performance showed a significant increase. In the second session, a sintering model, which contained a single nanoparticle and substrate, was built to illustrate the effects of metallization from the perspective of solid-state wetting. The contact angle was estimated using a creative method, and the crystallization structure evolutions under different sintering conditions were analyzed. We found that the lattice boundary generated as the Cu nanoparticle coalescence with Ag or Au substrate, which may decrease the bonding strength. However, for Ag and Au metallization, limited interface diffusion can be observed at the neck region, where a few numbers of substrate atoms transmitted toward Cu nanoparticle, and the contact area was larger than that of bare Cu substrate. Finally, a simple uniaxial stretching simulation was conducted to prove the results of sintering simulation. This study provides valuable insights into the effects of metallization on pressure-assisted nanocopper sintering, which can contribute to the optimization of mechanical properties of sintered nanoparticles in microelectronics applications.