High-Voltage and High-Current IGBT Press-pack Module for Power Grid
C. Tan (Southern University of Science and Technology , TU Delft - Electronic Components, Technology and Materials)
S. Wang (TU Delft - Bio-Electronics, Southern University of Science and Technology )
X. Liu (Southern University of Science and Technology , TU Delft - Electronic Components, Technology and Materials)
Jing Jiang (Fudan University)
Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
Huai-Yu Ye (Chongqing University, TU Delft - Electronic Components, Technology and Materials)
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Abstract
On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the heat dissipation problem of the module. In addition, the thermal analysis of subunit and the cooling structure is performed by using the finite element simulation, and the chip layout and water-cooling scheme are optimized. The testing of electrical parameters of the IGBT module is also conducted.