Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress
Shaogang Wang (Southern University of Science and Technology , TU Delft - Bio-Electronics)
Yanlong Tan (Research Institute of Fudan University, Ningbo)
Xu Liu (Southern University of Science and Technology )
Shizhen Li (Southern University of Science and Technology )
Ke Liu (Southern University of Science and Technology )
Wucheng Yuan (Southern University of Science and Technology )
Tao Li (PhasedCom Communication Technology Co.,Ltd)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
Paddy French (TU Delft - Bio-Electronics)
Huaiyu Ye (Southern University of Science and Technology )
Chunjian Tan (Southern University of Science and Technology )
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.