Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

Journal article (2023)

Authors

Ke Liu Southern University of Science and Technology
C. Tan Electronic Components, Technology and Materials - EEMCS , Southern University of Science and Technology
Shizhen Li Southern University of Science and Technology
Wucheng Yuan Southern University of Science and Technology
X. Liu Electronic Components, Technology and Materials - EEMCS , Southern University of Science and Technology
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
P.J. French Bio-Electronics - EEMCS
H. Ye Southern University of Science and Technology, Electronic Components, Technology and Materials - EEMCS
S. Wang Southern University of Science and Technology, Bio-Electronics - EEMCS
Research Group
Bio-Electronics (EEMCS) (TU Delft)
Copyright: © 2023 Ke Liu, C. Tan, Shizhen Li, Wucheng Yuan, X. Liu, Kouchi Zhang, P.J. French, H. Ye, S. Wang
DOI: https://doi.org/10.3390/electronics12132977
More Info
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Published Date

2023

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Bio-Electronics

Abstract

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (d (Formula presented.) /d (Formula presented.)) from a peak to zero. The simulation results show that the reverse recovery peak current (I (Formula presented.)) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.