CNT–metal nanoparticle interconnects are attractive for advanced and power electronic packaging, yet the atomistic mechanisms of nanoparticle–Carbon nanotube (NP–CNT) sidewall contact remain unclear under size and temperature variations. Here, molecular dynamics simulations establish a mechanism-consistent chain linking energetics, structural evolution, CNT mechanical accommodation, stress localization, and curvature-induced anisotropy in solid-state Ag NP–CNT contact. A direct Ag NP–NP benchmark highlights the fundamental difference: NP–CNT contact shows a much weaker energetic drive and lacks diffusion-driven neck growth. Therefore, interfacial adjustment is dominated by adsorption and coupled CNT indentation–bending–damping. Interfacial stresses concentrate near the contact boundary and penetrate into subsurface layers. Increasing temperature can reduces peak stress and broadens the stressed region. Systematic cases reveal that high temperature combined with small NP size activates late-time transient disordering followed by interface-adjacent recrystallization, producing a multi-grain, multiply twinned NP with Σ3{111}-related twins. At last the solid-state wetting analysis shows strong axial–circumferential anisotropy governed by indentation–bending coupling and cylindrical curvature. These results provide atomistic guidelines for choosing NP size, processing temperature, and CNT texture to balance adhesion, structural stability, and stress concentration.

In recent years, flexible strain sensors based on metal cracks have garnered significant interest for their exceptional sensitivity. However, striking a balance between sensitivity and detection range remains a significant challenge, which often limits its wider application. Herein, we introduce an innovative laser transmission pyrolysis technology to fabricate high-performance flexible strain sensors based on (Au) metal cracks with a microchannel array on the PDMS surface. The fabricated flexible strain sensors exhibit high sensitivity, wide detection range, precise strain resolution, fast response and recovery times, and robust durability. Furthermore, this technology has potential applications in microfluidics, microelectromechanical systems, and optical sensing.

The significance of wafer bonding is fundamental to the progression of electronic systems. Common fabrication techniques for Cu pillars play a crucial role in establishing resilient and efficient interconnects within semiconductor devices. It is imperative to explore the potential of nano-copper as an alternative material to overcome limitations associated with conventional copper. The use of nano copper paste in manufacturing has the potential to simplify the process, potentially reducing the number of steps compared to conventional methods. This study delves into the intricacies of wafer-level packaging (WLP), with a particular focus on hybrid bonding processes utilizing nanocopper sintering. Through the application of Finite Element Method (FEM) simulations, we investigate the stress distribution and thermal dynamics inherent in the sintering and hybrid bonding of both bulk copper and nanocopper materials. Our findings illuminate the superior mechanical and thermal properties of nanocopper, which contribute to reduced stress concentrations and enhanced mechanical integrity in semiconductor packaging. The research highlights the pivotal role of nanocopper sintering in advancing WLP technologies, offering insights into optimizing sintering and bonding parameters for improved device reliability and performance.

Substrate metallization is a crucial factor affecting the mechanical properties of sintered nanoparticles in microelectronics applications, as it is essential for ensuring good adhesion between the substrate and the sintered material. In this study, we investigated the influence of metallization on pressure-assisted nanocopper sintering and analyzed the related mechanism of interaction using experiments and molecular dynamics simulation. In the first session, we bonded dummy dies on various substrates, including bare Cu, and substrates with Ag or Au metallization by nanocopper pressure-assisted sintering. The mechanical properties of the bonding layers were estimated using shear strength and SEM image analysis of fracture and cross-section morphologies under different sintering conditions. We found that the group of Cu-bare Cu have better bonding strength as the sintering temperature or assisted pressure is not high enough. However, as more energy input to the bonding layer, such as higher temperature or larger sintering pressure, the mechanical performance showed a significant increase. In the second session, a sintering model, which contained a single nanoparticle and substrate, was built to illustrate the effects of metallization from the perspective of solid-state wetting. The contact angle was estimated using a creative method, and the crystallization structure evolutions under different sintering conditions were analyzed. We found that the lattice boundary generated as the Cu nanoparticle coalescence with Ag or Au substrate, which may decrease the bonding strength. However, for Ag and Au metallization, limited interface diffusion can be observed at the neck region, where a few numbers of substrate atoms transmitted toward Cu nanoparticle, and the contact area was larger than that of bare Cu substrate. Finally, a simple uniaxial stretching simulation was conducted to prove the results of sintering simulation. This study provides valuable insights into the effects of metallization on pressure-assisted nanocopper sintering, which can contribute to the optimization of mechanical properties of sintered nanoparticles in microelectronics applications.

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.

Flexible strain sensors based on nanomaterials have sparked a lot of interest in the field of wearable smart electronics. Laser induced graphene (LIG) based sensors in particular stand out due to their straightforward fabrication procedure, three-dimensional porous structures, and exceptional electromechanical capabilities. Recent studies have focused on LIG composites, however, it is still difficult to achieve great sensitivity and excellent linearity in a wide linear working range. Herein, a strain sensor with high sensitivity and good linearity is prepared in this work, which was realized by carbonizing the polyimide film coated with HfSe₂ to obtain three-dimensional porous graphene nanosheets decorated with HfSe₂ (HfSe₂/LIG). After being transferred to the flexible substrate of Ecoflex, it exhibits high stretchability, hydrophobicity and robustness, and obtains excellent electromechanical properties. The HfSe₂/LIG strain sensor demonstrated high sensitivity (gauge factor, GF ≈ 46), a low detection limit (0.02%), good linearity (R² = 0.99) in a large working range (up to 30%), and a quick response time (0.20 s). Additionally, it exhibits good stability and consistent behavior across a large number of strain/release test cycles (>3000 cycles). With these benefits, the sensor can be used to monitor various limb movements (including finger, wrist and neck movements) and minute artery activity, and can generate reliable signals. Therefore, the HfSe₂/LIG-based sensor has enormous potential for use in wearable intelligent electronics and movement monitoring.