This study explores the potential of pressureless nano-copper sintering for power chip interconnections. As electronics evolve towards miniaturization and higher power density, traditional interconnection materials such as nano-silver, despite their excellent thermal and electrical properties, face challenges like high cost and susceptibility to electromigration. Nano-copper, with comparable electrical conductivity and superior thermal performance at a lower cost, emerges as a promising alternative. The study examines the impact of sintering atmosphere and temperature on shear strength. Results show that nitrogen-protected environments significantly enhance bonding by preventing oxidation, while samples sintered in air exhibit minimal strength due to surface oxidation. Additionally, sintering at 230°C provides stronger bonds compared to 200°C, indicating improved diffusion and bonding at higher temperatures. SEM analysis of samples sintered at 300°C demonstrates optimal bonding, with minimal voids, making 300 ° C an ideal sintering temperature for reliable power chip packaging using nano-copper.