Finite Element Optimization of Thermal-Mechanical Coupling in Smart P2 Packagingaging Frontal Interconnects
Xiaowe i Zhang (Sky Chip Interconnection Technology Co)
Jieming Lin (Cornell University)
Shenglin Zhang (RadRock (Shenzhen) Semiconductor Ltd)
Xu Liu (TU Delft - Electronic Components, Technology and Materials)
Peng Ding (Sky Chip Interconnection Technology Co)
Guoshuai Liu (Sky Chip Interconnection Technology Co)
Yuqi Wang (Xi'an Jiaotong-Liverpool University)
Shaogang Wang (TU Delft - Bio-Electronics)
Lingen Wang (Suzhou Boschman Semiconductor Equipment Co)
Renhui Liu (Sky Chip Interconnection Technology Co)
Chenshan Gao (Southern University of Science and Technology )
Huaiyu Ye (Southern University of Science and Technology )
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
With the rapid advancement of power semiconductor packaging technologies, Smart P2 Packagingaging has emerged as a pivotal innovation for enhancing system performance and miniaturization. This study systematically investigates the thermal conduction characteristics and stress distributions of copper-filled vias (CFVs) in Smart P2Pack frontal interconnects through coupled thermal-mechanical finite element analysis. Results indicate that increasing CFV diameter enhances vertical heat conduction but causes localized heat accumulation and stress concentration due to the low thermal conductivity of encapsulation materials, elevating interfacial failure risks. Conversely, expanding CFV pitch promotes dispersed heat flow and reduces chip temperature but concurrently lowers local structural stiffness and exacerbates stress concentration. Optimal CFV design thus requires balancing thermal diffusion performance and mechanical constraints to ensure structural reliability and thermal stability.