A comparative noise analysis and measurement for n-type and p-type pixels with CMS technique

Conference Paper (2016)
Author(s)

X. Ge (TU Delft - Electronic Instrumentation)

Bastien Mamdy (Université Claude Bernard Lyon 1, STMicroelectronics)

A. Theuwissen (TU Delft - Electronic Instrumentation, Harvest Imaging)

Research Group
Electronic Instrumentation
DOI related publication
https://doi.org/10.2352/ISSN.2470-1173.2016.12.IMSE-282
More Info
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Publication Year
2016
Language
English
Research Group
Electronic Instrumentation
Pages (from-to)
1-6

Abstract

This paper presents a noise analysis and noise measurementsof n-type and p-type pixels with correlated multiple sampling(CMS) technique. The output noise power spectral density (PSD)of both pixel types with different CMS noise reduction factors havebeen simulated and calculated in the spectral domain. Forvalidation, two groups of test pixel have been fabricated with astate-of-the-art n-type and p-type CMOS image sensor (CIS)technology. The calculated and the measured noise results withCMS show a good agreement. Measurement results also show thatthe n-type and p-type pixels reach a 1.1 e- and 0.88 h+ inputreferredtemporal noise respectively with a board-level 64 timesdigital CMS and ×6 analog gain.

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