Valley Splitting in Silicon from the Interference Pattern of Quantum Oscillations

Journal Article (2022)
Author(s)

Mario Lodari (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

L. Lampert (Intel Corporation)

O. Zietz (Intel Corporation)

R. Pillarisetty (Intel Corporation)

J. S. Clarke (Intel Corporation)

Giordano Scappucci (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft)

Research Group
QCD/Scappucci Lab
Copyright
© 2022 M. Lodari, L. Lampert, O. Zietz, R. Pillarisetty, J. S. Clarke, G. Scappucci
DOI related publication
https://doi.org/10.1103/PhysRevLett.128.176603
More Info
expand_more
Publication Year
2022
Language
English
Copyright
© 2022 M. Lodari, L. Lampert, O. Zietz, R. Pillarisetty, J. S. Clarke, G. Scappucci
Research Group
QCD/Scappucci Lab
Issue number
17
Volume number
128
Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined in silicon metal oxide semiconductor Hall-bar transistors. These silicon metal oxide semiconductor Hall bars are made by advanced semiconductor manufacturing on 300 mm silicon wafers and support a two-dimensional electron gas of high quality with a maximum mobility of 17.6×103 cm2/Vs and minimum percolation density of 3.45×1010 cm-2. Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy splitting of the two low-lying conduction band valleys. From the analysis of the oscillations beating patterns up to T=1.7 K, we estimate a maximum valley splitting of ?EVS=8.2 meV at a density of 6.8×1012 cm-2. Furthermore, the valley splitting increases with density at a rate consistent with theoretical predictions for a near-ideal semiconductor-oxide interface.

Files

PhysRevLett.128.176603.pdf
(pdf | 0.545 Mb)
License info not available