Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

Conference paper (2016)

Authors

A.J. Blanker Photovoltaic Materials and Devices - EEMCS
Z. Vroon TNO/Solliance
M. Zeman Electrical Sustainable Energy
A.H.M. Smets Photovoltaic Materials and Devices - EEMCS
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Photonics Performance evaluation Photovoltaic cells Junctions Photonic band gap Indium tin oxide Charge carriers
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Published Date

2016

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TF-PV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current generation per layer is much lower, allowing much thinner absorber layers of CIGS. In this contribution we demonstrate working fabricated devices of CIGS bottom cells that are monolithically integrated with a hydrogenated amorphous silicon (a-Si:H) top cell. The proposed structures are a unique fusion of two distinct fabrication methods, being co-evaporation and plasma enhanced chemical vapor deposition (PE-CVD). In addition, devices without any ZnO have been processed. In those cells a nc-SiOx:H n-layer acted as an electron recipient and lateral insulator for the CIGS p-layer, and a highly p- and n-doped nc-SiOx:H layer served as the tunnel recombination junction. The top TCO on the a-Si:H cell was varied with ZnO:Al (AZO) and In2O3/Sn2O3 (ITO). Efficiencies of the not yet optimized devices have reached 7.9% active area efficiency (with Voc=1.23V, FF=64%, Jsc= 9.95 mA/cm2).