In Situ Annealing of Boron-Doped Amorphous Silicon Layers Using APCVD Technology
Vaibhav V. Kuruganti (TU Delft - Electrical Engineering, Mathematics and Computer Science, International Solar Energy Research Center (ISC))
Alexander Mazurov (SCHMID Group)
Sven Seren (SCHMID Group)
Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Valentin D. Mihailetchi (International Solar Energy Research Center (ISC))
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Abstract
In this work, we developed an in situ annealing process to crystallize boron-doped amorphous silicon [a-Si(p+)] layers deposited by atmospheric pressure chemical vapour deposition (APCVD) to form boron-doped polycrystalline silicon [poly-Si(p+)] layers. The influence of the temperature profiles during a-Si(p+) inline deposition on structural, electrical, and passivation properties was studied in detail. The results show that a-Si(p+) layers can be successfully crystallized by fine-tuning the temperature profiles in the postdeposition zones of the APCVD tool. It was observed that the hydrogenation processes during the fast firing play a significant role in enhancing the passivation quality as well as the electrical properties of the in situ annealed poly-Si(p+) layers. The sheet resistance (Rsh) and implied open circuit voltage (iVoc) of the best in situ annealed poly-Si(p+) layers were found to be comparable to the ones that were ex situ annealed in the tube furnace at 950 $^{\circ }$C for 30 min. The sheet resistance of 200 $\Omega$/$\square$ could be obtained on 150-nm thick poly-Si(p+) layers with an (iVoc) of 718 mV. The use of this novel in situ annealing process to form poly-Si(p+) layers opens a new horizon for a lean process sequence without the additional high-temperature annealing step for fabricating solar cells concepts based on passivating contact.