In Situ Annealing of Boron-Doped Amorphous Silicon Layers Using APCVD Technology

Journal article (2023)

Authors

Vaibhav V. Kuruganti Photovoltaic Materials and Devices - EEMCS , International Solar Energy Research Center (ISC)
Alexander Mazurov SCHMID Group
Sven Seren SCHMID Group
Olindo Isabella Photovoltaic Materials and Devices - EEMCS
Valentin D. Mihailetchi International Solar Energy Research Center (ISC)
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2023 V.V. Kuruganti, Alexander Mazurov, Sven Seren, O. Isabella, Valentin D. Mihailetchi
DOI: https://doi.org/10.1109/JPHOTOV.2023.3323788
Annealing Silicon Annealing Passivation Temperature measurement X-ray scattering Photovoltaic cells Polysilicon Atmospheric pressure chemical vapor deposition Atmospheric pressure chemical vapour deposition (APCVD) technology Tunnel oxide passivated contacts (TOPCon)
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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices