VM

Valentin D. Mihailetchi

6 records found

Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer-based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve ...
In this study, the edge passivation effectiveness and long-term stability of Nafion polymer in n-type interdigitated back contact (IBC) solar cells are investigated. For new module technologies such as half-cut, triple-cut, or shingled modules, cutting of the cells introduces unp ...
In this work, we developed an in situ annealing process to crystallize boron-doped amorphous silicon [a-Si(p+)] layers deposited by atmospheric pressure chemical vapour deposition (APCVD) to form boron-doped polycrystalline silicon [poly-Si(p+)] layers. The influence of the tempe ...
Even though interdigitated back contact (IBC) architecture produces the most efficient solar cells, it is difficult to make them cost-effective and industrially viable. Therefore, single-sided atmospheric pressure chemical vapor deposition (APCVD) is investigated for the fabricat ...
The high usage of silver in industrial solar cells may limit the growth of the solar industry. One solution is to replace Ag with copper. A screen printable Cu paste is used herein to metallize industrial interdigitated back contact (IBC) solar cells. A novel metallization struct ...
The edge recombination losses of crystalline silicon solar cells become significant when they are cut into smaller pieces to be assembled into modules. With the interdigitated pattern of doped p and n regions on the rear side, the interdigitated back contact (IBC) solar cells can ...