Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells

Conference Paper (2016)
Author(s)

Robin Vismara (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Miro Zeman (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Photovoltaic Materials and Devices
DOI related publication
https://doi.org/10.1117/12.2227174 Final published version
More Info
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Publication Year
2016
Language
English
Research Group
Photovoltaic Materials and Devices
Pages (from-to)
98980J-98980J
ISBN (print)
9781510601437
Event
SPIE Photonics Europe 2016 (2016-04-03 - 2016-04-07), Brussels, Belgium
Downloads counter
145

Abstract

Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.