Spin-orbit interaction in a dual gated InAs/GaSb quantum well
A.J.A. Beukman (TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Kouwenhoven Lab, Kavli institute of nanoscience Delft)
Folkert K. Vries (TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Jasper Van Veen (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QRD/Kouwenhoven Lab)
Rafal Skolasinski (Kavli institute of nanoscience Delft, TU Delft - QRD/Wimmer Group, TU Delft - QuTech Advanced Research Centre)
Michael Wimmer (TU Delft - QRD/Wimmer Group, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Fanming Qu (TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Kouwenhoven Lab, Kavli institute of nanoscience Delft)
David T. De Vries (Student TU Delft, Kavli institute of nanoscience Delft)
Binh Minh Nguyen (HRL Laboratories)
L.P. Kouwenhoven (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, Microsoft Quantum Lab Delft, TU Delft - QRD/Kouwenhoven Lab)
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Abstract
The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.