Review of Packaging Schemes for Power Module
Fengze Hou (Chinese Academy of Sciences, TU Delft - Electronic Components, Technology and Materials, National Center for Advanced Packaging)
Wenbo Wang (TU Delft - DC systems, Energy conversion & Storage, Shenzhen Institute of Wide-bandgap Semiconductors)
Liqiang Cao (Chinese Academy of Sciences, National Center for Advanced Packaging)
Jun Li (Chinese Academy of Sciences, National Center for Advanced Packaging)
Meiying Su (National Center for Advanced Packaging, Chinese Academy of Sciences)
Tingyu Lin (National Center for Advanced Packaging)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
Braham Ferreira (TU Delft - Electrical Sustainable Energy, University of Twente)
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Abstract
SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent with aluminum wires. In this article, low parasitic inductance and high-efficient cooling interconnection techniques for Si power modules, which are the foundation of packaging methods of SiC ones, are reviewed first. Then, attempts on developing packaging techniques for SiC power modules are thoroughly overviewed. Finally, scientific challenges in the packaging of SiC power module are summarized.