Advanced light management based on periodic textures for Cu(In,Ga)Se2 thin-film solar cells

Journal Article (2016)
Author(s)

Chidozie Onwudinanti (Student TU Delft)

R. Vismara (TU Delft - Photovoltaic Materials and Devices)

O. Isabella (TU Delft - Photovoltaic Materials and Devices)

Louis Grenet (French Alternative Energies and Atomic Energy Commission)

Fabrice Emieux (French Alternative Energies and Atomic Energy Commission)

M Zeman (TU Delft - Electrical Sustainable Energy)

Research Group
Photovoltaic Materials and Devices
Copyright
© 2016 Chidozie Onwudinanti, R. Vismara, O. Isabella, Louis Grenet, Fabrice Emieux, M. Zeman
DOI related publication
https://doi.org/10.1364/OE.24.00A693
More Info
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Publication Year
2016
Language
English
Copyright
© 2016 Chidozie Onwudinanti, R. Vismara, O. Isabella, Louis Grenet, Fabrice Emieux, M. Zeman
Research Group
Photovoltaic Materials and Devices
Issue number
6
Volume number
24
Pages (from-to)
693
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Abstract

We have used 3-D optical modelling to investigate light management concepts based on periodic textures and material optimization for photovoltaic devices based on Cu(In,Ga)Se2 (CIGS) absorber material. At first, calibration of the software based on the characterization of a reference (1500-nm thick) CIGS device was carried out. The effects of 1-D and 2-D symmetric gratings on the cell were then investigated, showing significant improvement in anti-reflection effect and in absorptance in the active layer, achieved by excitation of guided modes in the absorber. In addition, device configurations endowed with alternative back reflector and front transparent conductive oxide (TCO) were tested with the goal to quench parasitic absorption losses at front and back side. The use of In2O3:H (IOH) as front and back TCO, combined with an optimized 2-D grating structure, led to a 25% increase of the optical performance with respect to an equally-thick flat device. Most of the performance increase was kept when the absorber thickness was reduced from 1500 nm to 600 nm.

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