A 77/79-GHz Frequency Generator in 16-nm CMOS for FMCW Radar Applications Based on a 26-GHz Oscillator with Co-Generated Third Harmonic

Conference Paper (2019)
Author(s)

F Kuo (Taiwan Semiconductor Manufacturing Company (TSMC))

Z. Zong (TU Delft - Electronics)

Ron Chen (Taiwan Semiconductor Manufacturing Company (TSMC))

Lan-Chou Cho (Taiwan Semiconductor Manufacturing Company (TSMC))

CP Jou (Taiwan Semiconductor Manufacturing Company (TSMC))

Mark Chen (Taiwan Semiconductor Manufacturing Company (TSMC))

Robert Bogdan Staszewski (TU Delft - Electronics, University College Dublin)

Research Group
Electronics
Copyright
© 2019 Feng Wei Kuo, Z. Zong, Huan Neng Ron Chen, Lan Chou Cho, Chewn Pu Jou, Mark Chen, R.B. Staszewski
DOI related publication
https://doi.org/10.1109/ESSCIRC.2019.8902490
More Info
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Publication Year
2019
Language
English
Copyright
© 2019 Feng Wei Kuo, Z. Zong, Huan Neng Ron Chen, Lan Chou Cho, Chewn Pu Jou, Mark Chen, R.B. Staszewski
Research Group
Electronics
Pages (from-to)
53-56
ISBN (electronic)
9781728115504
Reuse Rights

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Abstract

This paper presents a digitally controlled frequency generator for dual frequency-band radar system that is optimized for 16 nm FinFET CMOS. It is based on a 21% wide tuning range,fine-resolution DCO with only switchable metal capacitors. A third-harmonic boosting DCO simultaneously generates 22.5-28 GHz and sufficiently strong 68-84 GHz signals to satisfy short-range radar (SRR) and medium/long range radar (M/LRR) requirements. The 20.2 mW DCO emits -97 dBc/Hz at 1 MHz offset from 77 GHz,while fully satisfying metal density rules. It occupies 0.07 mm2,thus demonstrating both 43% power and 47% area reductions. The phase noise and FoMT (figure-of-merit with tuning range) are improved by 1.8 dB and 0.2 dB,respectively,compared to state-of-the-art.

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