In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

Journal Article (2015)
Author(s)

C. Zhang (QN/High Resolution Electron Microscopy)

M. Neklyudova (QN/High Resolution Electron Microscopy)

L Fang (External organisation)

Q. Xu (QN/High Resolution Electron Microscopy)

Hui dong Wang (QN/High Resolution Electron Microscopy)

F. Tichelaar (QN/High Resolution Electron Microscopy)

HW Zandbergen (QN/High Resolution Electron Microscopy)

DOI related publication
https://doi.org/10.1088/0957-4484/26/15/155703
More Info
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Publication Year
2015
Language
English
Issue number
15
Volume number
26
Pages (from-to)
1-7

Abstract

The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (similar to 10(-2) Omega center dot cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

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