Evaluating the High Temperature Reliability of Glass Encapsulant Packaged SiC Schottky Diodes with High-temperature Step Stress Aging Test
Junwei Chen (Fudan University)
Tao Luo (Fudan University)
Wei Chen (Fudan University)
Guoqi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Jiajie Fan (Research Institute of Fudan University, Ningbo)
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Abstract
Silicon carbide (SiC) power devices exhibit superior thermal conductivity and excellent high-temperature stability, making them promising for high-power applications under extreme environments. However, ensuring long-term reliability, especially for devices packaged with glass encapsulant, remains a significant challenge. This paper introduces a high-temperature step stress aging test as a highly accelerated life testing method to evaluate the reliability of SiC Schottky diodes packaged with glass encapsulants compared to traditional plastic-packaged counterparts. In this test, diodes undergo incremental thermal stress from 50 °C to 300 °C, increasing by 50 °C per step and held for 168 hours per step to simulate prolonged thermal exposure. Finite element simulations were also performed at 300 °C to analyze stress distributions in various packaging configurations. Post-aging results demonstrate the effectiveness of this accelerated method for rapidly assessing device degradation, providing valuable reliability insights for applications in extreme thermal environments such as aerospace power systems.