A 210 nW NPN-Based Temperature Sensor With an Inaccuracy of ±0.15 °C (3σ) From −15 °C to 85 °C Utilizing Dual-Mode Frontend

Journal article (2022)

Authors

T. Someya Electronic Instrumentation -

Vincent Van Hoek Student

J. Angevare Electronic Instrumentation -

S. Pan Electronic Instrumentation -

K.A.A. Makinwa Microelectronics

Kofi A.A. Makinwa Microelectronics

Research Group

Electronic Instrumentation () (TU Delft)

DOI: https://doi.org/10.1109/LSSC.2022.3222578

Low power Temperature sensor BJT Low leakage Temperature-to-digital converter

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Published Date

2022

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This letter describes an NPN-based temperature sensor that achieves a 1-point trimmed inaccuracy of ±0.15 °C (3σ) from -15 to 85 °C while dissipating only 210 nW. It uses a dual-mode frontend to roughly halve the power consumption of conventional frontends. First, two NPNs are used to generate a well-defined PTAT bias current, then this current is sampled and applied to the same NPNs to generate well-defined PTAT and CTAT voltages. These voltages are then applied to a low-power tracking ΔΣ modulator-based ADC, which employs a digital filter to efficiently generate a multibit representation of temperature. A prototype fabricated in a 180-nm BCD process achieves 15-mK resolution in a 50 ms conversion time, which translates into a state-of-the-art resolution FoM of 2.3 pJK2.

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