50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes

Conference Paper (2008)
Author(s)

G Gentile (TU Delft - Electronics)

K. Buisman (TU Delft - Electronics)

A Aknoukh (External organisation)

L.C.N. de Vreede (TU Delft - Electronics)

B Rejaei (TU Delft - QN/Theoretical Physics)

Lis Nanver (TU Delft - EEMS - General)

Research Group
Electronics
DOI related publication
https://doi.org/10.1109/SMIC.2008.56
More Info
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Publication Year
2008
Language
English
Research Group
Electronics
Pages (from-to)
199-202
ISBN (print)
978-1-4244-1855-8

Abstract

We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.

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