50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes

Conference paper (2008)

Authors

G. Gentile Electronics - EEMCS
K. Buisman Electronics - EEMCS
A. Aknoukh External organisation
L.C.N. de Vreede Electronics - EEMCS
B Rejaei QN/Theoretical Physics
L.K. Nanver EEMS - General
Research Group
Electronics (EEMCS) (TU Delft)
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Published Date

2008

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.