Test and Diagnosis of Hard-to-Detect Faults in FinFET SRAMs

Doctoral thesis (2022)

Authors

G. Cardoso Medeiros Quantum & Computer Engineering
Department
Quantum & Computer Engineering
Copyright: © 2022 G. Cardoso Medeiros
DOI
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https://doi.org/10.4233/uuid:94469c76-9ee1-48b3-981f-f0d3d427b1d5
Diagnosis Memory test Manufacturing test SRAM FinFET Manufacturing defect Fault model Test solution Design-for-testability
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Published Date

2022

Language

English

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Department

Quantum & Computer Engineering

Abstract

The Fin Field-Effect Transistor (FinFET) technology became the most promising approach to enable the downscaling of technological nodes below the 20 nm threshold. However, the introduction of new technology nodes for embedded memories such as SRAMs, especially for even smaller nodes such as 10 and 5 nm, gives rise to new manufacturing failure mechanisms; these could both impact the yield and the outgoing product quality in the absence of appropriate diagnosis and test solutions. Therefore, there is a need for effective yet cost-efficient test and diagnosis solutions. This thesis contributes to fault modeling, test development, and diagnosis of FinFET based SRAM.