Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets
Nikos Papadopoulos (Kavli institute of nanoscience Delft, TU Delft - QRD/Goswami Lab)
Eduardo Flores (Instituto de Micro y Nanotecnología, Madrid)
Kenji Watanabe (National Institute for Materials Science)
Takashi Taniguchi (National Institute for Materials Science)
Jose Ramón Ares (Campus de Cantoblanco)
Carlos Sanchez (Campus de Cantoblanco)
Isabel J. Ferrer (Campus de Cantoblanco)
Andres Castellanos-Gomez (Instituto de Ciencia de Materiales de Madrid (ICMM))
Gary Alexander Steele (TU Delft - QN/Steele Lab, Kavli institute of nanoscience Delft)
H.S.J. van der Zant (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)
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Abstract
We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.