Modulation of Gas Adsorption on SnS by strain

Conference Paper (2018)
Author(s)

Fa-Fei Hu (Chongqing University)

H. Ye (Chongqing University)

Hongyu Tang (TU Delft - Electronic Components, Technology and Materials)

Xianping Chen (Chongqing University)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ICEPT.2018.8480834
More Info
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Publication Year
2018
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
941-943
ISBN (print)
978-1-5386-6387-5
ISBN (electronic)
978-1-5386-6386-8

Abstract

SnS monolayer has sparked intensive attention due to its unique electronic and optical properties. We systemically investigate the electronic properties of SnS by first-principles calculation. Our results show that the monolayer possesses indirect bandgap. We further perform mechanical strain to adjust the electronic structure of SnS, corresponding results display an indirect-direct transition of band gap when subjected to proper external strain. Interestingly, the bandgap can be linearly increase under tensile strain from 0% to 7%, while the bandgap reduced under compressive strain. For biaxial strain, the band gap changes more remarkable compared with that under uniaxial strain (zigzag x or armchair y direction). Furthermore, we demonstrate that the gas molecules (CO2, H2S, C2H4 and NO2) adsorption property on SnS monolayer can be modulated through biaxial strain. Especially, the NO2 adsorption is further enhanced on the SnS monolayer under biaxial tensile strain. These results may provide guidance for fabricating SnS-based strained gas sensor.

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