The Electronics Editorial Office retracts the article “Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study” [1], cited above. Following publication, the authors contacted the Editorial Office regarding errors identified in the simulation model and analysis presented in the article [1]. Adhering to our standard procedure, an investigation was conducted by the Editorial Board that confirmed that the simulation presented in this paper is incorrect due to the use of incorrect material parameters: Silicon Carbide (SiC) parameters were used, instead of Silicon (Si). Consequently, the conclusions drawn from this simulation are invalid and cannot be relied upon. As a result, the Editorial Office, Editorial Board, and the authors have concluded that this error undermines the validity and accuracy of the findings, and have decided to retract this article [1] as per MDPI’s retraction policy (https://www.mdpi.com/ethics#_bookmark30). This retraction was approved by the Editor-in-Chief of the journal Electronics. The authors agree to this retraction.

Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N _FLI ), length (L), and position (D1) of floating islands are optimized according to breakdown voltage (BV), electric field distribution, and on-resistance. The results show that NFLI = 1 × 10 ¹⁷ cm ^-3 , L = 2.5 μm, and D1 = 9.0 μm are superior values for FLI structure considering tradeoff between BV and on-resistance. With the same BV capacity, the on-resistance of SiC FLIMOSFET is decrease by 32% comparing to the conventional SiC VDMOSFET. Besides, the dynamic property shows 16.5% reduction of FoM R _{on} cdot Q _GD in the SiC FLIMOSFET. Significantly, comparing to the conventional structure, the electro-thermal simulation indicates that the SiC FLIMOSFET has a higher robustness under short-circuit condition owing to the reduction of thermal stress in SiC/SiO ₂ interface. All the results show that the SiC FLIMOSFET has a good potential in SiC power device.

SnS monolayer has sparked intensive attention due to its unique electronic and optical properties. We systemically investigate the electronic properties of SnS by first-principles calculation. Our results show that the monolayer possesses indirect bandgap. We further perform mechanical strain to adjust the electronic structure of SnS, corresponding results display an indirect-direct transition of band gap when subjected to proper external strain. Interestingly, the bandgap can be linearly increase under tensile strain from 0% to 7%, while the bandgap reduced under compressive strain. For biaxial strain, the band gap changes more remarkable compared with that under uniaxial strain (zigzag x or armchair y direction). Furthermore, we demonstrate that the gas molecules (CO₂, H₂S, C₂H₄ and NO₂) adsorption property on SnS monolayer can be modulated through biaxial strain. Especially, the NO₂ adsorption is further enhanced on the SnS monolayer under biaxial tensile strain. These results may provide guidance for fabricating SnS-based strained gas sensor.

Sensitive materials for formaldehyde (HCHO) sensor need high sensitivity and selectivity. The research on two dimensional (2D) sensitive material is growing, and most studies focus on the pristine or modified graphene. So it is essential to introduce other 2D materials into HCHO gas sensor. In this report, the adsorption behaviors of organic gas molecules including C₂H₆, C₂H₄, C₂H₂, C₆H₆, C₂H₅OH and HCHO over indium triphosphide (InP₃) monolayer were studied by using first-principle atomistic simulations. The calculation results demonstrate that InP₃ monolayer has a high sensitivity and selectivity to HCHO than others. By comparing the structures and adsorption results of InP₃ monolayer, graphene and single-layered MoS₂, it was found that the polarity bonds and steric effect of the site on monolayer play an important role in the detection of HCHO. The effect of strain on the gas/substrate adsorption systems was also studied, implying that the stained InP₃ monolayer could enhance the sensitivity and selectivity to HCHO. This study provides useful insights into the gas-surface interaction that may assist future experimental development of 2D material for HCHO sensing and performance optimization based on strain.

IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength.

The sensing behavior of monolayer tin sulfide (SnS) for four gas molecules (NH₃, NO₂, CO, and H₂O) are studied by the first-principle calculation based on density-functional theory. We calculate adsorption energy, adsorption distance, and Hirshfeld charge to estimate the adsorption ability of monolayer SnS for these gas molecules. The results demonstrate that all the gas molecules show physisorption nature. We further calculate the current-voltage (I -V ) curves using the nonequilibrium Green's function formalism for evaluating the NO₂ gas sensing properties. The monolayer SnS is found to be strongly sensitive to NO₂ molecule dependent on moderate adsorption energy, excellent charge transfer, and significant change of I -V property before and after gas adsorption. Therefore, we suggest that monolayer SnS can be a prominent candidate for application as NO₂ gas sensor.